BCR112... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR112/F BCR112W C 3 R1 R2 1 B 2 E EHA07184 Type Marking BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112F WFs 1=B 2=E 3=C - - - TSFP-3 BCR112W WFs 1=B 2=E 3=C - - - SOT323 1Pb-containing Pin Configuration Package package may be available upon special request 1 2007-09-17 BCR112... Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 30 Input reverse voltage Vi(rev) 10 Collector current IC 100 Total power dissipation- Ptot 200 BCR112F, TS ≤128°C 250 BCR112W, TS ≤124°C 250 Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS V mA mW BCR112, TS ≤102°C Junction temperature Unit 150 °C -65 ... 150 Value BCR112 ≤ 240 BCR112F ≤ 90 BCR112W ≤ 105 Unit K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-09-17 BCR112... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 1.61 mA hFE 20 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 3.2 4.7 6.2 kΩ Resistor ratio R1/R2 0.9 1 1.1 - fT - 140 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 2007-09-17 BCR112... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC ), IC/IB = 20 10 3 0.5 V 0.4 10 2 hFE Vcesat 0.35 10 1 0.3 -40 °C -25 °C 25 °C 85 °C 125 °C 0.25 0.2 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 0.15 0.1 0.05 10 -1 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi (on) = ƒ(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C V Vi(off) Vi(on) V 10 0 10 -1 -5 10 -1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 -1 IC 4 2007-09-17 BCR112... Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS) BCR112 BCR112F 300 300 mW 250 250 225 225 200 200 Ptot Ptot mW 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) BCR112 BCR112W 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 125 100 10 0 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2007-09-17 BCR112... Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p) Ptotmax/PtotDC = ƒ(tp ) BCR112 BCR112F 10 2 - K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax / PtotDC 10 3 10 1 10 0 -6 10 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 tp Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p) Ptotmax/PtotDC = ƒ(tp ) BCR112F BCR112W 10 3 10 3 10 2 10 2 RthJS Ptotmax/PtotDC K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2007-09-17 BCR112... Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) BCR112W Ptotmax / PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2007-09-17 Package SOT23 BCR112... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 8 2007-09-17 Package SOT323 BCR112... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 9 2007-09-17 Package TSFP-3 BCR112... Package Outline 0.2 ±0.05 0.55 ±0.04 1 1.2 ±0.05 0.2 ±0.05 3 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.2 ±0.05 0.15 ±0.05 0.4 ±0.05 0.4 ±0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout (Example) Manufacturer BCR847BF Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 10 2007-09-17 BCR112... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-09-17