Preliminary Datasheet BCR2AS-14A R07DS0257EJ0100 Rev.1.00 Feb 28, 2011 Triac Low Power Use Features Non-Insulated Type Planar Passivation Type IT (RMS) : 2 A VDRM : 700 V IFGTI, IRGTI, IRGT : 10 mA Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 2, 4 12 3 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Small motor control, heater control, and other general purpose AC power control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 14 700 840 Symbol VDRM VDSM Unit V V Symbol Ratings Unit RMS on-state current IT (RMS) 2 A Commercial frequency, sine full wave 360conduction Surge on-state current ITSM 9 A 50Hz sinewave 1 full cycle, peak value, non-repetitive I2t 0.41 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 1 – 40 to +125 – 40 to +125 0.26 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Value corresponding to 1 cycle of half wave 50Hz, surge on-state current Typical value Notes: 1. Gate open. R07DS0257EJ0100 Rev.1.00 Feb 28, 2011 Page 1 of 6 BCR2AS-14A Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 1.0 2.1 Unit mA V Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 3A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 2.0 2.0 2.0 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 10 10 10 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2 — — — — 4.0 V C/W Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 0.5 — — V/s Tj = 125C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = –1.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0257EJ0100 Rev.1.00 Feb 28, 2011 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 6 BCR2AS-14A Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 10 Surge On-State Current (A) 101 100 1.0 1.5 3.0 3.5 2 0 100 4.0 101 102 Gate Trigger Current vs. Junction Temperature VGM = 6V PGM = 1W PG(AV) = 0.1W IGM = 0.5A 100 IFGT I, IRGT I, IRGT III VGD = 0.2V 101 102 103 103 Typical Example 102 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 –40 4 Gate Characteristics VGT = 2V 101 6 Conduction Time (Cycles at 60Hz) 10−1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 2.5 8 On-State Voltage (V) 101 Gate Voltage (V) 2.0 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10−1 0.5 0 40 80 120 Junction Temperature (°C) R07DS0257EJ0100 Rev.1.00 Feb 28, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tj = 25°C 5 4 3 2 1 0 10−1 100 101 102 Conduction Time (Cycles at 60Hz) Page 3 of 6 BCR2AS-14A Preliminary Allowable Case Temperature vs. RMS On-State Current 160 3.5 140 3.0 2.5 2.0 1.5 1.0 0.5 1.0 10 2.0 0 0.5 1.0 1.5 2.0 2.5 Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 5 4 3 0 40 80 120 160 10 2 10 1 –40 0 40 80 120 160 Latching Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature T2+, G– Typical Example 0 T2+, G+ Typical Example T –, G– 2 Typical Example –40 Typical Example Junction Temperature (°C) 1 −1 103 Junction Temperature (°C) Distribution 10 40 RMS On-State Current (A) 2 10 60 2.5 2 10 80 RMS On-State Current (A) 10 –40 10 Latching Current (mA) 1.5 Typical Example 10 100 0 0 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 10 120 20 0.5 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 4.0 0 40 80 120 Junction Temperature (°C) R07DS0257EJ0100 Rev.1.00 Feb 28, 2011 160 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 6 Preliminary Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics (Tj=125°C) 101 160 Typical Example Tj = 125°C 140 120 100 80 60 I Quadrant III Quadrant 40 20 0 100 101 102 103 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) BCR2AS-14A III Quadrant 100 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 10 I Quadrant Minimum Characteristics Value 10−1 10−1 Rate of Rise of Off-State Voltage (V/μs) Gate Trigger Current vs. Gate Current Pulse Width Conditions VD = 200V IT = 1A τ = 500μs Tj = 125°C Typical Example 100 101 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 3 6 6 Typical Example IRGT III A 6V V 102 A 6V RG Test Procedure I RG V Test Procedure II IFGT I 6 IRGT I A 6V 101 0 10 101 Gate Current Pulse Width (μs) R07DS0257EJ0100 Rev.1.00 Feb 28, 2011 102 V RG Test Procedure III Page 5 of 6 BCR2AS-14A Preliminary Package Dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part Number BCR2AS-14A#B00 BCR2AS-14A-T13#B00 Packing Tube Embossed Tape Quantity 75 pcs. 3000 pcs. 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