CENTRAL BCV47_10

BCV47
SURFACE MOUNT
NPN
SILICON DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 type is a
Silicon NPN Darlington Transistor manufactured by the
epitaxial planar process, epoxy molded in a surface mount
package, designed for applications requiring extremely high
gain.
MARKING CODE: FG
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
80
UNITS
V
VCEO
VEBO
60
V
10
V
IC
ICM
500
mA
800
mA
IB
PD
100
mA
350
mW
TJ, Tstg
ΘJA
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
IEBO
VBE=10V
MAX
100
UNITS
nA
100
nA
BVCEO
IC=10mA
60
V
BVCBO
IC=10µA
IE=100nA
80
V
BVEBO
VCE(SAT)
10
VBE(SAT)
IC=100mA,
IC=100mA,
hFE
VCE=5.0V, IC=1.0mA
2,000
hFE
hFE
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
10,000
fT
VCE=5.0V, IC=30mA, f=100MHz
V
IB=0.1mA
IB=0.1mA
1.0
V
1.5
V
4,000
220
MHz
R2 (20-November 2009)
BCV47
SURFACE MOUNT
NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: FG
R2 (20-November 2009)
w w w. c e n t r a l s e m i . c o m