Si3851DV New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET With Schottky Diode VDS (V) –30 rDS(on) () ID (A) 0.200 @ VGS = –10 V 1.8 0.360 @ VGS = –4.5 V 1.2 VKA (V) Vf (v) Diode Forward Voltage IF (A) 30 0.5 V @ 0.5 A 0.5 S K D A TSOP-6 Top View A 1 6 K S 2 5 N/C G 3 4 D G 3 mm 2.85 mm P-Channel MOSFET Parameter Symbol 5 sec Steady State Drain-Source Voltage (MOSFET and Schottky) VDS –30 Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150C) 150 C) (MOSFET)a VGS TA = 25C TA = 70C Pulsed Drain Current (MOSFET) IS Average Foward Current (Schottky) Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range 20 1.8 1.6 1.5 –1.05 TA = 70C TA = 25C PD TA = 70C 7 1.15 0.83 0.73 0.53 1.0 0.76 0.64 TJ, Tstg A –0.75 0.5 IFM TA = 25C 1.2 7 IF Pulsed Foward Current (Schottky) V 20 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID Unit W 0.48 –55 to 150 C Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70978 S-61845—Rev. A, 11-Oct-99 www.vishay.com FaxBack 408-970-5600 2-1 Si3851DV New Product Vishay Siliconix Parameter Device Symbol Typical Maximum 93 110 103 125 130 150 140 165 75 90 80 95 MOSFET t v 5 sec Schottky J Junction-to-Ambient i A bi MOSFET RthJA Steady State Schottky MOSFET Junction-to-Foot Steady State Schottky RthJF Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Parameter Symbol Test Condition Min VDS = VGS, ID = –250 mA –1.0 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State On State Resistancea Drain-Source rDS(on) DS( ) Forward Transconductancea Diode Forward Voltagea V VDS = 0 V, VGS = "20 V "100 VDS = –24 V, VGS = 0 V –1 VDS = –24 V, VGS = 0 V, TJ = 75C –10 VDS w –5 V, VGS = –10 V –5 nA mA A VGS = –10 V, ID = –1.8 A 0.165 0.200 VGS = –4.5 V, ID = –1.2 A 0.298 0.360 gfs VDS = –15 V, ID = –1.8 A 2.4 VSD IS = –1.05 A, VGS = 0 V –0.83 –1.10 2.4 3.6 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDS = –15 15 V V, VGS = –5 5V V, ID = –1.8 18A nC C 0.9 0.8 VDD = –15 V,, RL = 15 W 15 V ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –1.05 A, di/dt = 100 A/ms 8 12 12 18 12 18 7 11 30 60 Typ Max ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Parameter Forward Voltage Drop M i Maximum R Reverse Leakage L k Current C Junction Capacitance www.vishay.com FaxBack 408-970-5600 2-2 Symbol VF Irm CT Test Condition Min IF = 0.5 A 0.45 0.5 IF = 0.5 A, TJ = 125C 0.35 0.4 Vr = 30 V 0.002 0.100 Vr = 30 V, TJ = 75C 0.06 1 Vr = 30 V, TJ = 125C 1.5 10 Vr = 10 V 24 Unit V mA A pF Document Number: 70978 S-61845—Rev. A, 11-Oct-99 Si3851DV New Product Vishay Siliconix Output Characteristics Transfer Characteristics 8 10 6V VGS = 10 thru 7 V TC = –55C I D – Drain Current (A) I D – Drain Current (A) 8 5V 6 4 4V 6 25C 125C 4 2 2 2V 3V 0 0 0 1 2 3 4 5 0 1 VDS – Drain-to-Source Voltage (V) 2 4 5 6 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 300 0.6 0.5 240 0.4 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 3 VGS = 4.5 V 0.3 VGS = 10 V 0.2 Ciss 180 120 Coss 60 0.1 Crss 0 0 0 1 2 3 4 5 6 0 7 6 ID – Drain Current (A) 1.6 r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 1.8 VDS = 15 V ID = 1.8 A 8 6 4 2 0 0 1 2 3 Qg – Total Gate Charge (nC) Document Number: 70978 S-61845—Rev. A, 11-Oct-99 18 24 30 VDS – Drain-to-Source Voltage (V) Gate Charge 10 12 4 5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si3851DV New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 ID = 1.8 A r DS(on)– On-Resistance ( W ) I S – Source Current (A) 0.5 TJ = 150C 1 TJ = 25C ID = 1 A 0.4 0.3 0.2 0.1 0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 8 0.4 0.2 Power (W) V GS(th) Variance (V) 6 ID = 250 mA 0.0 4 2 –0.2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 10 30 Time (sec) TJ – Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70978 S-61845—Rev. A, 11-Oct-99 Si3851DV New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Reverse Current vs. Junction Temperature Forward Voltage Drop 5 1 I F – Forward Current (A) I R – Reverse Current (mA) 20 10 0.1 30 V 0.01 10 V TJ = 150C 1 TJ = 25C 0.001 0.0001 0.1 0 25 50 75 100 125 150 0 TJ – Junction Temperature (C) 0.4 0.6 0.8 1.0 VF – Forward Voltage Drop (V) Capacitance 125 CT – Junction Capacitance (pF) 0.2 100 75 VGS = 10 V ID = 1.8 A 50 25 0 0 6 12 18 24 30 VKA – Reverse Voltage (V Document Number: 70978 S-61845—Rev. A, 11-Oct-99 www.vishay.com FaxBack 408-970-5600 2-5 Si3851DV New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 140C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com FaxBack 408-970-5600 2-6 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70978 S-61845—Rev. A, 11-Oct-99