VISHAY SI4370DY

Si4370DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
Channel 1
Channel-1
30
Channel 2
Channel-2
rDS(on) (W)
ID (A)
0.022 @ VGS = 10 V
7.5
0.030 @ VGS = 4.5 V
6.5
0.022 @ VGS = 10 V
7.5
0.028 @ VGS = 4.5 V
6.5
FEATURES
D
D
D
D
LITTLE FOOTr Plus Schottky
Si4830DY Pin Compatible
PWM Optimized
100% Rg Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V @ 1.0 A
2.0
D1
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
Schottky Diode
G2
Top View
Ordering Information: Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
10 secs
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
Channel-1
Pulsed Drain Current
Channel-2
"20
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
"12
Unit
V
5.7
6.0
4.6
A
30
PD
TA = 70_C
"20
7.5
IS
TA = 25_C
Channel-2
"12
IDM
Continuous Source Current (Diode Conduction)a
Channel-1
30
ID
TA = 70_C
Steady State
1.7
0.9
2.0
1.1
1.3
0.7
TJ, Tstg
W
−55 to 150
_C
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 10 sec
Steady-State
Steady-State
RthJA
RthJF
Schottky
Typ
Max
Typ
Max
52
62.5
53
62.5
93
110
93
110
35
40
35
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
1
Si4370DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body
VGS(th)
IGSS
VDS = VGS, ID = 250 mA
"100
Ch-2
"100
VDS = 5 V,
V VGS = 10 V
VGS = 10 V
V, ID = 7.5
75A
Drain Source On-State
Drain-Source
On State Resistanceb
rDS(on)
DS( )
VGS = 4
4.5
5 V
V, ID = 6.5
65A
Forward Transconductanceb
Diode Forward Voltageb
2.0
Ch-1
IDSS
ID(on)
D( )
3.0
0.8
VDS = 0 V, VGS = "12 V
VDS = 30 V,
V VGS = 0 V,
V TJ = 85_C
On State Drain Currentb
On-State
1.0
Ch-2
VDS = 0 V, VGS = "20 V
VDS = 30 V,
V VGS = 0 V
Zero Gate Voltage Drain Current
Ch-1
gfs
f
VDS = 15 V
V, ID = 7.5
75A
VSD
IS = 1 A,
A VGS = 0 V
Ch-1
1
Ch-2
100
Ch-1
15
Ch-2
V
nA
mA
2000
Ch-1
20
Ch-2
20
A
Ch-1
0.014
0.022
Ch-2
0.015
0.022
Ch-1
0.024
0.030
Ch-2
0.020
0.028
Ch-1
19
Ch-2
21
Ch-1
0.75
1.2
Ch-2
0.47
0.5
W
S
V
Dynamica
Total Gate Charge
Qg
Gate Source Charge
Gate-Source
Qgs
Gate Drain Charge
Gate-Drain
Qgdd
Gate Resistance
Turn On Delay Time
Turn-On
Rise Time
td(on)
d( )
Fall Time
td(off)
d( ff)
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
tf
Source Drain Reverse Recovery Time
Source-Drain
trr
7
11
Ch-2
11.5
18
Ch-1
2.9
Ch-2
3.8
Ch-1
2.5
Ch-2
Rg
tr
Turn Off Delay Time
Turn-Off
VDS = 15 V
V, VGS = 4.5
4 5 V,
V ID = 7.5
75A
Ch-1
IF = 1.7
17A
A, di/dt = 100 A/ms
nC
3.5
Ch-1
0.5
1.5
1.9
Ch-2
0.5
1.8
1.9
Ch-1
9
15
Ch-2
12
20
Ch-1
10
17
Ch-2
10
17
Ch-1
19
30
Ch-2
40
66
Ch-1
9
15
Ch-2
9
15
Ch-1
35
55
Ch-2
28
45
W
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
www.vishay.com
2
CT
Test Condition
Min
Typ
Max
IF = 1.0 A
0.47
0.50
IF = 1.0 A, TJ = 125_C
0.36
0.42
Vr = 30 V
0.004
0.100
Vr = 30 V, TJ = 100_C
0.7
10
Vr = −30 V, TJ = 125_C
3.0
20
Vr = 10 V
50
Unit
V
mA
pF
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL-1
Output Characteristics
30
Transfer Characteristics
30
VGS = 10 thru 5 V
4V
25
I D − Drain Current (A)
I D − Drain Current (A)
25
20
15
10
5
20
15
10
TC = 125_C
5
25_C
3V
−55_C
0
0
0
2
4
6
8
10
0
1
VDS − Drain-to-Source Voltage (V)
2
On-Resistance vs. Drain Current
5
Capacitance
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
4
1200
0.040
0.030
VGS = 4.5 V
0.020
VGS = 10 V
0.010
Ciss
960
720
480
Coss
240
0.000
Crss
0
0
5
10
15
20
25
30
0
5
ID − Drain Current (A)
10
15
20
25
30
VDS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
VDS = 15 V
ID = 7.5 A
1.6
8
r DS(on) − On-Resistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
3
VGS − Gate-to-Source Voltage (V)
6
4
2
VGS = 10 V
ID = 7.5 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
Qg − Total Gate Charge (nC)
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
15
0.6
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
www.vishay.com
3
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL-1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.06
20
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
10
TJ = 150_C
1
TJ = 25_C
0.1
0.0
0.05
0.04
ID = 7.5 A
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
6
8
10
Single Pulse Power, Junction-to-Ambient
0.4
100
0.2
80
ID = 250 mA
−0.0
60
Power (W)
V GS(th) Variance (V)
4
VGS − Gate-to-Source Voltage (V)
−0.2
40
−0.4
20
−0.6
−0.8
−50
−25
0
25
50
75
100
125
0
10−3
150
10−2
TJ − Temperature (_C)
10−1
1
10
Time (sec)
100
Safe Operating Area, Junction-to-Foot
Limited
by rDS(on)
1 ms
I D − Drain Current (A)
10
10 ms
1
100 ms
0.1
1s
10 s
TC = 25_C
Single Pulse
dc
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
www.vishay.com
4
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
Normalized Effective Transient
Thermal Impedance
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
10−1
1
Square Wave Pulse Duration (sec)
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
5
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL-2
Output Characteristics
Transfer Characteristics
30
30
VGS = 10 thru 4 V
25
I D − Drain Current (A)
I D − Drain Current (A)
25
20
3V
15
10
20
15
10
TC = 125_C
5
5
0
0
0.0
25_C
−55_C
0
2
4
6
8
10
0.5
VDS − Drain-to-Source Voltage (V)
1.0
1.5
0.032
1600
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
2000
VGS = 4.5 V
VGS = 10 V
0.016
0.008
3.5
4.0
1200
800
400
0.000
Coss
0
0
5
10
15
20
25
30
0
5
ID − Drain Current (A)
10
15
20
25
30
VDS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
VDS = 15 V
ID = 7.5 A
r DS(on) − On-Resistance (W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
3.0
Ciss
Crss
8
6
4
2
1.6
VGS = 10 V
ID = 7.5 A
1.4
1.2
1.0
0.8
0
0
5
10
15
20
Qg − Total Gate Charge (nC)
www.vishay.com
6
2.5
Capacitance
On-Resistance vs. Drain Current
0.040
0.024
2.0
VGS − Gate-to-Source Voltage (V)
25
0.6
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL-2
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
20
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
10
TJ = 150_C
1
TJ = 25_C
ID = 7.5 A
0.04
0.03
0.02
0.01
0.00
0.1
0.0
0.3
0.6
0.9
1.2
0
1.5
2
VSD − Source-to-Drain Voltage (V)
4
6
8
10
VGS − Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
100
0.3
80
ID = 250 mA
0.1
Power (W)
V GS(th) Variance (V)
0.2
−0.0
−0.1
−0.2
60
40
20
−0.3
−0.4
−50
−25
0
25
50
75
100
125
0
10−3
150
10−2
TJ − Temperature (_C)
10−1
1
10
Time (sec)
100
Safe Operating Area, Junction-to-Foot
Limited
by rDS(on)
1 ms
I D − Drain Current (A)
10
10 ms
1
100 ms
0.1
TC = 25_C
Single Pulse
1s
10 s
dc
0.01
0.1
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
1
10
VDS − Drain-to-Source Voltage (V)
100
www.vishay.com
7
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
10−1
1
Square Wave Pulse Duration (sec)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
www.vishay.com
8
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
Forward Voltage Drop
10
10
TJ = 150_C
1
I F − Forward Current (A)
I R − Reverse Current (mA)
SCHOTTKY
30 V
0.1
24 V
0.01
TJ = 25_C
0.001
0.0001
0
25
50
75
100
125
150
TJ − Temperature (_C)
1
0.0
0.3
0.6
0.9
1.2
1.5
VF − Forward Voltage Drop (V)
Capacitance
200
C − Capacitance (pF)
160
120
80
Coss
40
0
0
6
12
18
24
30
VDS − Drain-to-Source Voltage (V)
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
9