Si4816BDY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 6.8 FEATURES Qg (Typ) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested 78 7.8 0.0225 @ VGS = 4.5 V 6.0 0.0115 @ VGS = 10 V 11.4 0.016 @ VGS = 4.5 V 9.5 11 6 11.6 SCHOTTKY PRODUCT SUMMARY D1 VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 G1 SO-8 G1 1 8 D1 A/S2 2 7 D2/S1 A/S2 3 6 D2/S1 G2 4 5 D2/S1 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 N-Channel 2 MOSFET Top View S2 Ordering Information: Si4816BDY—E3 Si4816BDY-T1—E3 (with Tape and Reel) A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Symbol 10 secs Channel-2 Steady State 10 secs Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range IS PD 5.8 11.4 5.5 4.6 9.0 30 8.2 6.5 A 40 1 0.9 2.2 1.15 1.4 1.0 2.4 1.25 0.9 0.64 1.5 0.8 TJ, Tstg Unit V 6.8 IDM Steady State W −55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF Channel-2 Schottky Typ Max Typ Max Typ Max 72 90 43 53 48 60 100 125 82 100 80 100 51 63 25 30 28 35 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 1 Si4816BDY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) VDS = VGS, ID = 250 mA IGSS VDS = 0 V, V VGS = 20 V VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = 5 V, V VGS = 10 V Ch-1 1.0 3.0 Ch-2 1.0 3.0 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 V nA mA 2000 Ch-1 20 Ch-2 30 A VGS = 10 V, ID = 6.8 A Ch-1 0.0155 VGS = 10 V, ID = 11.4 A Ch-2 0.0093 0.0185 0.0115 VGS = 4.5 V, ID = 6.0 A Ch-1 0.0185 0.0225 VGS = 4.5 V, ID = 9.5 A 0.016 Ch-2 0.013 VDS = 15 V, ID = 6.8 A Ch-1 30 VDS = 15 V, ID = 11.4 A Ch-2 31 IS = 1 A, VGS = 0 V Ch-1 0.73 1.1 IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 Ch-1 7.8 10 Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.8 A Ch-2 11.6 18 Ch-1 2.9 Channel 2 Channel-2 VDS = 15 V, VGS = 5 V, ID = −11.4 A Ch-2 4.8 Ch-1 2.3 W S V Dynamica Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Ch-2 Ch-1 3.0 4.5 Ch-2 0.9 1.8 2.7 Ch-1 11 17 Ch-2 13 20 Ch-1 9 15 Ch-2 9 15 Ch-1 24 40 Ch-2 31 50 Ch-1 9 15 Ch-2 11 17 IF = 1.3 A, di/dt = 100 A/ms Ch-1 20 35 IF = 2.2 A, di/dt = 100 mA/ms Ch-2 25 40 td(on) d( ) td(off) d( ff) Fall Time tf Source Drain Reverse Recovery Time Source-Drain trr 3.7 1.5 Rg tr nC Channel-1 Channel 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W Channel-2 Channel 2 VDD = 1 15 V V, RL = 1 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product Vishay Siliconix SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance Test Condition CT Typ Max IF = 1.0 A Min 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = −30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1 Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 4 V 35 30 I D − Drain Current (A) I D − Drain Current (A) 35 25 20 15 10 3V 5 0 1 2 3 4 25 20 15 TC = 125_C 10 25_C 5 2V 0 30 0 0.0 5 −55_C 0.5 1.0 VDS − Drain-to-Source Voltage (V) 1.5 On-Resistance vs. Drain Current 3.0 3.5 4.0 4.5 Capacitance 1000 0.04 C − Capacitance (pF) DS(on) − On-Resistance ( W ) 2.5 1200 0.05 r 2.0 VGS − Gate-to-Source Voltage (V) 0.03 VGS = 4.5 V 0.02 VGS = 10 V Ciss 800 600 400 Coss 0.01 200 Crss 0 0.00 0 5 10 15 20 25 ID − Drain Current (A) Document Number: 73026 S-41510—Rev. A, 09-Aug-04 30 35 40 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) www.vishay.com 3 Si4816BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1 Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 6.8 A 5 VGS = 10 V ID = 6.8 A 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 6 4 3 2 1.2 1.0 0.8 1 0 0 2 4 6 8 0.6 −50 10 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage DS(on) − On-Resistance ( W ) TJ = 25_C r I S − Source Current (A) TJ = 150_C 10 75 100 125 150 0.04 0.03 ID = 6.8 A 0.02 0.01 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 100 0.2 80 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 50 On-Resistance vs. Gate-to-Source Voltage 0.05 40 −0.2 60 40 −0.4 20 −0.6 −0.8 −50 0 −25 0 25 50 75 TJ − Temperature (_C) www.vishay.com 4 25 TJ − Junction Temperature (_C) 100 125 150 0.001 0.01 0.1 1 10 Time (sec) Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1 Safe Operating Area 100 *rDS(on) Limited IDM Limited I D − Drain Current (A) 10 1 ms 1 10 ms ID(on) Limited 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s BVDSS Limited dc 0.01 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si4816BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2 Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V 32 4V I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 24 16 TC = 125_C 8 3V 0 1 2 −55_C 2V 0 3 4 25_C 0 0.0 5 0.5 VDS − Drain-to-Source Voltage (V) VGS = 4.5 V 0.012 VGS = 10 V 0.008 0.004 3.0 3.5 4.0 4.5 1200 800 Coss 400 Crss 0 0 5 10 15 20 25 30 0 6 ID − Drain Current (A) 1.6 VDS = 15 V ID = 9.5 A 1.4 rDS(on) − On-Resiistance (Normalized) 5 12 18 24 30 VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 2.5 Ciss 1600 0.000 4 3 2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9.5 A 1.2 1.0 0.8 1 0 0 3 6 9 Qg − Total Gate Charge (nC) www.vishay.com 6 2.0 Capacitance 2000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.016 1.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 1.0 12 15 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C r I S − Source Current (A) On-Resistance vs. Gate-to-Source Voltage 0.05 40 1 0.0 CHANNEL-2 0.04 0.03 0.02 ID = 9.5 A 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 6 8 10 VGS − Gate-to-Source Voltage (V) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 10 1 80 VDS = 30 V 0.1 Power (W) IR − Reverse Current (mA) 4 VDS = 24 V 0.01 60 40 0.001 20 0.0001 0 0.00001 0 25 50 75 100 125 150 0.001 0.01 TJ − Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area *rDS(on) Limited IDM Limited I D − Drain Current (A) 10 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 1s TC = 25_C Single Pulse 10 s BVDSS Limited dc 0.01 0.1 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 7 Si4816BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 0.02 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 8 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C 1 I F − Forward Current (A) I R − Reverse Current (mA) SCHOTTKY 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ − Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF − Forward Voltage Drop (V) Capacitance 200 C − Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73026. Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 9