ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A 1 ØD B 2 C .060 x 45° CHAMFER 3 E 4 FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System 0.25 A VCC 30 V PDISS 7.0 W @ TC = 25 OC inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 O TSTG -65 C to +200 C θJC 25 OC/W .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 G O MAXIMUM MINIMUM F O NP DIM E O I K M -65 C to +200 C TJ J L MAXIMUM RATINGS IC F H H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 1 = Collector 2&3 = Base 3 = Emitter ORDER CODE: ASI10542 CHARACTERISTICS SYMBOL O TC = 25 C NONETEST CONDITIONS BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 10 mA ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V RBE = 10 Ω IC = 100 mA MINIMUM TYPICAL MAXIMUM V 45 V 3.5 V 15 f = 1.0 MHz POUT = 1.0 W f = 4.0 GHz UNITS 45 5.0 25 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 3.5 pF dB % REV. B 1/1