MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FY7BFH-02E FY7BFH-02E HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FY7BFH-02E OUTLINE DRAWING Dimensions in mm ➄ 6.4 4.4 ➇ ➀ ➃ 3.0 1.1 0.275 0.65 ➀ ➁ ➆➇ ➄➅ ● 2.5V DRIVE ● VDSS .................................................................................. 20V ● rDS (ON) (MAX) .............................................................. 30mΩ ● ID ........................................................................................... 7A ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN ➃ ➂ TSSOP8 APPLICATION Li - ion battery, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID IDM IDA Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) IS ISM PD Source current Source current (Pulsed) Maximum power dissipation Channel temperature Tch Tstg — Storage temperature Weight Conditions VGS = 0V VDS = 0V L = 10µH Typical value Ratings Unit 20 ±10 7 49 7 V V A A A 1.8 7.2 1.6 –55 ~ +150 A A W °C –55 ~ +150 0.035 °C g Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7BFH-02E HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage V (BR) GSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-a) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3.5A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.8A, VGS = 0V Channel to ambient IS = 1.8A, dis/dt = –50A/µs Unit Min. 20 ±10 — Typ. — — — Max. — — ±10 — 0.5 — — — 0.9 23 30 0.1 1.3 30 40 mA V mΩ mΩ — — — — 0.161 16 1400 520 0.210 — — — V S pF pF — — — — 400 30 100 190 — — — — pF ns ns ns — — — — 190 0.85 — 50 — 1.1 78.1 — ns V °C/W ns V V µA PERFORMANCE CURVES DRAIN CURRENT ID (A) 1.6 1.2 0.8 0.4 0 tw = 10µs 3 2 100µs 101 7 5 1ms 3 2 10ms 100 7 5 100ms 3 2 TC = 25°C Single Pulse 10–1 0 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 50 100 150 DC 2 3 5 7 100 2 3 5 7 101 2 3 5 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 5V 4V 3V 2.5V 16 7 200 VGS = 5V 4V 3V 2.5V 2V 2V TC = 25°C Pulse Test 12 1.5V 8 4 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 8 TC = 25°C Pulse Test 1.5V 6 4 PD = 1.6W 2 PD = 1.6W 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7BFH-02E HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 100 TC = 25°C Pulse Test 0.8 0.6 0.4 ID = 14A 0.2 7A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 80 60 40 VGS = 2.5V 20 4V 3A 0 0 1.0 2.0 3.0 4.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 5.0 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 20 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 12 8 4 0 TC = 25°C VDS = 10V Pulse Test 0 1.0 2.0 3.0 4.0 7 5 125°C 3 2 100 7 5 10–1 5.0 VDS = 10V Pulse Test 5 7 100 2 3 5 7 101 2 3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 5 7 5 3 3 2 Ciss 103 Coss 7 5 Crss 3 2 102 7 5 TCh = 25°C f = 1MHZ VGS = 0V 101 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 75°C 101 3 2 104 3 2 TC = 25°C 3 2 td(off) 2 tf 102 tr 7 5 td(on) 3 2 101 7 5 10–1 TCh = 25°C VDD = 10V VGS = 4V RGEN = RGS = 50Ω 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7BFH-02E HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 7V 3.0 10V 15V 2.0 1.0 0 8 16 24 32 25°C 8 4 0 0.4 0.8 1.2 1.6 2.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 3 2 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 75°C SOURCE-DRAIN VOLTAGE VSD (V) VGS = 4V 7 ID = 7A 5 Pulse Test 1.4 TC = 125°C 12 GATE CHARGE Qg (nC) 101 10–1 VGS = 0V Pulse Test 16 0 40 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 TCh = 25°C ID = 7A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 0.5 3 2 0.2 101 7 5 D = 1.0 0.1 0.05 3 0.02 2 100 7 5 PDM 0.01 Single Pulse tw T 3 2 D= tw T 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001