STMICROELECTRONICS SD1476

SD1476
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
..
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55 - 88 MHz
32 VOLTS
COMMON EMITTER
GOLD METALLIZATION
INTERNAL INPUT MATCHING
CLASS AB PUSH PULL
HIGH SATURATED POWER CAPABILITY
DIFFUSED EMITTER BALLAST
RESISTORS
DESIGNED FOR HIGH POWER LINEAR
OPERATION
P OUT = 240 W MIN. WITH 12.0 dB GAIN
2 x .437 x .450 2LFL (M165)
epoxy sealed
ORDER CODE
SD1476
BRANDING
SD1476
PIN CONNECTION
DESCRIPTION
The SD1476 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band I television transmitters and transposers.
1. Collector
2. Base
3. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
Device Current
25
A
Power Dissipation
430
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 50 to +150
°C
0.4
°C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
November 1992
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SD1476
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 50mA
IE = 0mA
70
—
—
V
BVCER
IC = 50mA
RBE = 51Ω
68
—
—
V
BVCEO
IC = 100mA
IB = 0mA
40
—
—
V
BVEBO
IE = 20mA
IC = 0mA
4.0
—
—
V
I CEO
VCE = 30V
IE = 0mA
—
—
10
mA
I CBO
VCB = 30V
IE = 0mA
—
—
10
mA
hFE
VCE = 5V
IC = 7A
10
—
50
—
DYNAMIC
Symbol
Min.
Typ.
Max.
Unit
POUT *
f = 88 MHz
VCE = 32 V
ICQ = 2 x 400mA
240
—
—
W
GP
ηc
f = 88 MHz
VCE = 32 V
ICQ = 2 x 400mA
12
—
—
dB
f = 88 MHz
VCE = 32 V
ICQ = 2 x 400mA
50
—
—
%
COB
f = 1 MHz
VCB = 28 V
—
—
220
pF
Note:
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Value
Test Conditions
*1 dB Compression
SD1476
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
THERMAL RESISTANCE vs CASE
TEMPERATURE
COLLECTOR EFFICIENCY vs FREQUENCY
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SD1476
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z CL
55 MHz
ZIN (Ω)
1.7 j 1.0
ZCL (Ω)
6.1 + j 1.0
65 MHz
1.5 + j 1.3
7.0 + j 2.1
75 MHz
1.0 + j 1.1
6.2 + j 2.0
90 MHz
POUT = 240 W
VCC = 32 V
0.8 + j 0.4
3.4 + j 4.4
FREQ.
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SD1476
PRINTED CIRCUIT BOARD LAYOUT
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SD1476
TEST CIRCUIT
C1
C2
C3, C’3
C4
C5
C6
C7
C8, C’8
C9
C10
C11
C12, C’12
C13, C’13
C14, C’14
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10pF + 33pF, ATC 100B
47pF, ATC 100B
1.5nF + 2.2nF, ATC 100B
4 - 60pF, Arco 404
2 x 100pF + 47pF, ATC 100B
2 x 330pF + 3 x 180pF +270pF, ATC 100B
150pF + 10pF, ATC 100B
4.7nF, ATC 100B
4 - 40pF, Arco 403
10pF, ATC 100B
43pF, ATC 100B
1µF 63V, LCC CPM13B
82nF 100V, LCC 745
270nF 63V, LCC7950
L1, L7
L2
L3, L’3
L4, L’4
L5, L’5
L6
L8, L’8
L9, L’9
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4 Turns Diameter 7mm, Wire Diameter 1.5mm
7 Turns Diameter 25mm, Coaxial Cable Zc = 25Ω
2 Turns Diameter 2.5mm, Wire Diameter 0.8mm
Length 15mm, Wire Diameter 1.5mm
Length 30mm, Wire Diameter 1.5mm
6 Turns Diameter 25mm, Coaxial Cable Zc = 25Ω
16 Turns Diameter, Wire Diameter 1.5mm
1 Turn, Wire Diameter 1.5mm in Ferrite
(stackpole 57 33 12)
L10, L’10
L11, L’11 : 14 Turns, Wire Diameter 0.6mm Around Resistor 1W
R1, R’1
R2, R’2 : 180Ω , 1W
Material : Epoxy 63 mil, Er = 2.55
SD1476
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0165
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SD1476
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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