SD4010 RF & MICROWAVE TRANSISTORS UHF TV LINEAR APPLICATIONS .. .. .. 470-860 MHz 26.5 VOLTS GOLD METALLIZATION P OUT = 20.0W MIN. WITH 9.5 dB GAIN INTERNAL INPUT MATCHING DIFFUSED EMITTER BALLAST RESISTORS .400 x .425 4LFL (M119) hermetically sealed ORDER CODE SD4010 BRANDING SUTV200 PIN CONNECTION DESCRIPTION The SD4010 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors. The SD4010 is intended for use in linear applications up to 1GHz, including UHF television transmitters, transposers and cellular base stations. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60.0 V VCES Collector-Emitter Voltage 60.0 V VEBO Emitter-Base Voltage 4.0 V Device Current (Maximum) 11.0 A Power Dissipation 88.8 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 1.9 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/5 SD4010 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Unit Min . Typ. Max. 3.0 4.0 — V BVEBO IE = 10mA IC = 0mA BVCES IC = 50mA VBE = 0V 60.0 85.0 — V BVCEO IC = 50mA IB = 0mA 28.0 30.0 — V ICEO VCE = 26.5V IE = 0mA — — 5 mA hFE VCE = 5V IC = 3A 25 50 80 — Tested Per Side DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT f = 860MHz VCE = 26.5V PIN = 2.2W 20.0 28.0 — W GP f = 860MHz VCE = 26.5V POUT = 20W 9.5 10.5 — dB IMD3 PSYNC = 20W VCE = 26.5V (note 1) — −48 −46 dBc IP3 VCB = 26.5V POUT = 20W PEP (note 2) — 55 — dBm COB f = 860MHz VCB = 26.5V (note 3) — 25 36 pF Load* f = 860MHz Mismatch VCE = 26.5V POUT = 20W 3:1 10:1 — VSWR Note 1: I CQ = IC = 2.7A (1.35A per Si de) *VSWR tested for a minimum of 3:1 SWR at all phase angles. Three Tone IMD Testing (CCIR) f1 = 860.0MHz/ −8dB ref. to PSYNC - Visual −16dB ref. to PSYNC - Color Subcarrier f3 = 864.5MHz/ −7dB ref. to PSYNC - Aural f2 = 863.5MHz/ Note 2: IP 3 Calcul ated Based on Two-T one IMD Testing: = f2 = f1 900.0 MHz/ 900.1 MHz/ IMD 3 (Typ) < −6dB −6dB − 36dBc ref. to P OU T ref. to P OU T Note 3: Test ed Per Si de TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/5 POWER OUTPUT & POWER GAIN vs TOTAL COLLECTOR CURRENT SD4010 TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT TEST CIRCUIT SCHEMATIC Balun 1, 2 : 50Ω Coaxial Cable, λ/4 @ 860 MHz C1, C4, C11, C16 : 100µF, 50V Electrolytic C2, C5, C12, C15 : 10µF, 35V Tantalum C3, C6, C7 C8, C19, C20 : 75 pF Ceramic Chip, ATC B C9, C18 : 0.4 - 2.5 pF Variable, JOHANSON Giga-trim C10 : 2pF Ceramic Chip, ATC B C17 : 5pF Ceramic Chip, ATC B L1, L2 : 7 Turns, 0.12” I.D., #22 AWG (1:1) L3, L4 : 5 Turns, 0.12” I.D., #22 AWG (1:1) See Photomaster for Microstrip Lines Board Material: ROGERS Ultra-Lam Er = 2.55, Height = 0.030”, 2 oz. Cu. 3/5 SD4010 PHOTOMASTER OF TEST CIRCUIT 4/5 SD4010 PACKAGE MECHANICAL DATA Ref. Dwg. No.: 12-0119 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5