Previous Datasheet Index Next Data Sheet PD - 9.779A IRGP440U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V G @VGE = 15V, I C = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 500 40 22 80 80 ±20 15 160 65 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-605 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.77 — 40 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGP440U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 500 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.35 — V/°C VGE = 0V, I C = 1.0mA — 2.4 3.0 IC = 22A V GE = 15V — 2.8 — V IC = 40A See Fig. 2, 5 — 2.4 — IC = 22A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 6.6 13 — S VCE = 100V, I C = 22A — — 250 µA VGE = 0V, V CE = 500V — — 1000 VGE = 0V, V CE = 500V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. 55 11 19 27 13 100 56 0.37 0.18 0.55 27 15 137 100 0.96 13 1400 250 42 Max. Units Conditions 83 IC = 22A 17 nC VCC = 400V See Fig. 8 29 VGE = 15V — TJ = 25°C — ns IC = 22A, V CC = 400V 150 VGE = 15V, R G = 10Ω 100 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 0.70 — TJ = 150°C, — ns IC = 22A, V CC = 400V — VGE = 15V, R G = 10Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-606 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGP440U 60 F o r b o th : 50 L O A D C U R R E N T (A ) Tria n g u la r w a v e : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 3 5 W 40 C la m p v o lta g e : 8 0 % o f ra te d S q u are w av e: 30 6 0 % o f ra te d v o lta g e 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 100 IC , C o llector-to-E m itte r C urren t (A ) I C , C ollector-to-E mitter C urrent (A ) 1000 TJ = 2 5°C TJ = 1 50 °C 10 100 T J = 15 0°C V G E = 15 V 20 µs P UL S E W ID TH 1 1 T J = 2 5°C 10 V C C = 1 00 V 5 µs P U L S E W ID TH 1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-607 To Order 20 Previous Datasheet Index Next Data Sheet IRGP440U 3.5 V G E = 15 V V C E , C ollector-to-E m itter V oltage (V) Maxim um D C Collector C urrent (A ) 40 30 20 10 0 V G E = 15 V 80 µ s P UL S E W IDTH I C = 4 4A 3.0 2.5 I C = 2 2A 2.0 I C = 1 1A 1.5 25 50 75 100 125 150 -60 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z thJC ) 1 D = 0.50 0.2 0 0.1 0.10 PD M 0.0 5 t 0 .0 2 0 .0 1 0.01 0.00001 1 t S ING L E PU LS E (T HE R MA L R ES PO N S E) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-608 To Order 10 Previous Datasheet Index Next Data Sheet IRGP440U 250 0 V G E , G ate-to-E m itter V oltag e (V ) 200 0 C , Capacitance (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 40 0V I C = 22 A 16 Cies 150 0 12 Coes 100 0 500 Cres 0 8 4 0 1 10 1 00 0 20 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 40 0V = 1 5V = 25°C = 22 A T o tal S w itc hing Los se s (m J) T o ta l S w itc hin g L os se s (m J) 0.9 40 Q G , T o tal G a te C h a rg e (n C ) 0.8 0.7 0.6 R G = 10 Ω V GE = 15 V V CC = 4 00 V I C = 44 A I C = 22 A 1 I C = 1 1A 0.1 0.5 0 20 40 -60 60 R G , G a te R e s is ta n c e ( Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-609 To Order Previous Datasheet Index Next Data Sheet IRGP440U RG TC VCC VGE 1 000 = 10 Ω = 1 50°C = 40 0V = 1 5V I C , C ollector-to-E m itter Current (A ) T o ta l S w itc hin g L o s s e s (m J ) 3.0 2.0 1.0 VGGE E= 2 0V T J = 125 °C 100 S A FE O P E R A TING A R E A 10 0.0 1 0 10 20 30 40 50 1 10 1 00 V C E , C o llector-to-Em itter V oltage (V ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC C-610 To Order Section D - page D-13 1000