Previous Datasheet Index Next Data Sheet PD - 9.1117 IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.3V G @VGE = 15V, IC = 17A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 1200 29 17 58 58 8.0 130 ± 20 160 65 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-285 To Order Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.77 1.7 — 40 — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet IRGPH40FD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, I C = 250µA Temperature Coeff. of Breakdown Voltage — 1.3 — V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage — 2.5 3.3 IC = 17A V GE = 15V — 3.2 — V IC = 29A See Fig. 2, 5 — 3.0 — IC = 17A, T J = 150°C Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance 5.0 11 — S VCE = 100V, I C = 17A Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, V CE = 1200V — — 1000 VGE = 0V, V CE = 1200V, T J = 150°C Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13 — 2.3 3.0 IC = 8.0A, T J = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 45 11 17 70 58 320 370 2.6 5.4 8.0 70 54 670 930 15 13 1200 75 15 63 106 4.5 6.2 140 335 133 85 Max. Units Conditions 67 IC = 17A 16 nC VCC = 400V 26 See Fig. 8 — TJ = 25°C — ns IC = 17A, V CC = 800V 550 VGE = 15V, R G = 10Ω 630 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 15 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 17A, V CC = 800V — VGE = 15V, R G = 10Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 95 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 I F = 8.0A 8.0 A TJ = 25°C See Fig. 11 TJ = 125°C 15 V R = 200V 380 nC TJ = 25°C See Fig. 880 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-286 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPH40FD2 25 D uty c yc le : 50% TJ = 12 5 °C T s in k = 9 0 °C G ate d rive as sp e cified Turn-on lo sse s in clu de e ffec ts of reve rse re co very Power Dissipation = 35 W Load Current (A) 20 15 6 0 % o f ra te d vo lta g e 10 5 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 1000 IC , C olle ctor-to -E m itte r C u rren t (A ) I C , C o lle ctor-to-E m itter C urre nt (A ) 100 TJ = 2 5°C TJ = 15 0 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 100 TJ = 1 50 °C 10 TJ = 2 5°C 1 0.1 V C C = 1 00 V 5µ s P U LS E W IDTH 0.01 10 5 V C E , C o llector-to-Em itter V oltage (V) 10 15 V G E , G ate -to-E m itter V olta ge (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-287 To Order 20 Previous Datasheet Index Next Data Sheet IRGPH40FD2 5.0 V G E = 15 V V C E , C ollec tor-to -E m itte r V o lta ge (V ) M aximum D C C ollector Current (A ) 30 20 10 0 V G E = 1 5V 8 0µ s P U LS E W IDTH I C = 3 4A 4.0 I C = 1 7A 3.0 I C = 8.5 A 2.0 25 50 75 100 125 150 -60 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 14 0 160 T C , C as e T em pe ra ture (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z th JC ) 1 D = 0 .5 0 0.2 0 0.1 0.1 0 PD M 0 .05 0.0 2 t SIN G LE P UL SE (TH ER MA L R E SP O NS E ) t2 N o te s: 1 . D u ty fa c to r D = t 0.0 1 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-288 To Order 10 Previous Datasheet Index Next Data Sheet IRGPH40FD2 20 24 0 0 C, C apacitance (pF) 20 0 0 V G E , G a te-to-E m itte r V o ltag e (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 Cies 16 0 0 V C E = 40 0V I C = 17 A 12 Coes 12 0 0 800 Cres 400 8 4 0 0 1 10 0 100 10 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC Total Switching Losses (mJ) 8.6 30 40 50 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 = 800V = 15V = 25°C = 17A Total Switching Losses (mJ) 8.7 20 Q g , T o tal G a te C h a rg e (n C ) V C E , C o llector-to-Em itter V oltage (V) 8.5 8.4 8.3 8.2 8.1 RG = 10Ω V GE = 15V V CC = 800V I C = 34A I C = 17A 10 I C = 8.5A 8.0 7.9 A 1 0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) R G , Gate Resistance (Ω) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-289 To Order Previous Datasheet Index Next Data Sheet IRGPH40FD2 1000 = 10Ω = 150°C = 800V = 15V I , C o llec to r-to-E m itter C urren t (A ) RG TC V CC V GE 30 20 VGGE E= 20 V T J = 12 5°C 100 S A FE O P E RA TIN G A RE A 10 1 C 10 A 0 0 10 20 30 0.1 1 40 10 100 1000 V C E , C o llec to r-to -E m itte r V o lta g e (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 40 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0 2 4 6 8 10 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-290 To Order 10000 Previous Datasheet Index Next Data Sheet IRGPH40FD2 100 200 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 160 120 I IRRM - (A) t rr - (ns) I F = 16A I F = 8.0A I F = 4.0A IF = 16A IF = 8.0A 10 I F = 4.0A 80 40 0 100 1 100 1000 dif /dt - (A/µs) 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 600 VR = 200V TJ = 125°C TJ = 25°C 500 di(rec)M/dt - (A/µs) I F = 4.0A Q RR - (nC) 400 IF = 16A 300 200 I F = 8.0A I F = 4.0A I F = 8.0A 100 VR = 200V TJ = 125°C TJ = 25°C 100 0 100 IF = 16A 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt 10 100 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-291 To Order 1000 Previous Datasheet Index Next Data Sheet IRGPH40FD2 90% Vge Same type device as D.U.T. +Vge Vce 430µF 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of Eoff = ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix H: Section D - page D-10 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-292 To Order Section D - page D-13