Silicon Junction FETs (Small Signal) 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 +0.1 1.0±0.1 0.5 0 to 0.1 +0.1 0.15–0.05 0.45±0.1 0.3 0.75±0.15 Symbol Unit VGDS −40 V Drain current ID 10 mA Gate current IG 2 mA Allowable power dissipation PD 125 mW Channel temperature Tch 125 °C Storage temperature Tstg −55 to +150 °C Gate to Drain voltage 3 2 ■ Absolute Maximum Ratings (Ta = 25 ± 3°C) Ratings 1 0.5 1.6±0.1 ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Parameter 0.2–0.05 ■ Features 1: Source 2: Drain 3: Gate 0.2±0.1 EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol: HS ■ Electrical Characteristics (Ta = 25 ± 3°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 Gate to Source leakage current IGSS VGS = −20V, VDS = 0 Gate to Drain voltage VGDS IG = −100µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 1µA Forward transfer admittance | Yfs | VDS = 10V, ID = 1µA, f = 1kHz Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss min typ 1.4 max Unit 4.7 mA −1 nA −40 V −3.5 2.5 V mS 5 pF 1 pF 1 pF Note: The test method to comply with JISC7030, Field effect transistor test method. 1