Transistors with built-in Resistor UNR5174 Silicon PNP epitaxial planar transistor For digital circuits 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Symbol Rating Unit Collector to base voltage VCBO −50 V Collector to emitter voltage VCEO −50 V Collector current IC −100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter (0.425) Unit : mm 0.3+0.1 –0.0 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 7P Internal Connection C R1 (10 kΩ) B R2 E (47 kΩ) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 Collector cutoff current ICBO VCB = −50 V, IE = 0 − 0.1 ICEO VCE = −50 V, IB = 0 − 0.5 IEBO VEB = −6 V, IC = 0 − 0.2 mA hFE VCE = −10 V, IC = −5 mA − 0.25 V − 0.2 V kΩ Emitter cutoff current DC current gain Collector to emitter saturation voltage VCE(sat) V V 80 IC = −10 mA, IB = − 0.3 mA High-level output voltage VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Low-level output voltage VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ −4.9 V Input resistance R1 −30% 10 +30% Resistance ratio R1 / R2 0.17 0.21 0.25 0.95 1.2 Forward voltage (DC) VF IF = 100 mA Gain bandwidth product fT VCB = −10 V, IE = 1 mA, f = 200 MHz Publication date: May 2002 SJH00046AED µA 80 V MHz 1 UNR5174 140 −120 120 IB = −1.0 mA 80 60 40 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 20 0 0 20 40 60 80 100 120 140 160 − 0.1 mA 0 hFE IC 200 25°C 100 50 0 −1 −10 −100 −1 000 Collector current IC (mA) 1 0 Collector to base voltage VCB (V) Input voltage VIN (V) −1 −100 Output current IO (mA) 2 25°C − 0.01 −1 −10 −100 SJH00046AED −1 000 Collector current IC (mA) IO VIN −5 −10 −15 −20 −25 −30 −35 −40 VO = − 0.2 V Ta = 25°C −10 −25°C VO = −5 V Ta = 25°C f = 1 MHz Ta = 25°C −10 − 0.1 −1 −12 Ta = 75°C −100 VIN IO −100 −10 −1 Cob VCB −25°C 150 −8 Collector output capacitance Cob (pF) Ta = 75°C −6 10 VCE = −10 V 250 −4 IC / IB = 10 − 0.1 Output current IO (mA) 300 −2 −10 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) DC current gain hFE Ta = 25°C −100 100 0 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC VCE −140 Collector current IC (mA) Total power dissipation PT (mW) PT T a 160 −10 −1 − 0.1 − 0.4 − 0.6 − 0.8 −1 −1.2 −1.4 Input voltage VIN (V) −1.6 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be ex-ported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY