ETC XP0421M

Composite Transistors
XP0421M
Silicon NPN epitaxial planar transistor
0.2±0.05
5
6
5˚
1
3
2
(0.65) (0.65)
1.3±0.1
2.0±0.1
■ Basic Part Number of Element
• UNR121M (UN121M) × 2 elements
0.9±0.1
Rating
Unit
VCBO
50
V
of
Collector to emitter voltage
VCEO
50
V
element
Collector current
IC
100
mA
Total
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
Symbol
Collector to base voltage
0.9+0.2
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Marking Symbol: FH
Internal Connection
6
5
Tr1
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
0.2±0.1
1.25±0.10
2.1±0.1
• Two elements incorporated into one package (Transistors with
built-in resistor)
• Reduction of the mounting area and assembly cost by one half
Parameter
0.12+0.05
–0.02
4
■ Features
Rating
Unit: mm
(0.425)
For digital circuits/switching
Symbol
Conditions
Min
4
Tr2
2
Typ
3
Max
Unit
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
50
Collector to emittter voltage
VCEO
IC = 2 mA, IB = 0
50
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
0.1
ICEO
VCE = 50 V, IB = 0
0.5
IEBO
VEB = 6 V, IC = 0
0.2
mA
hFE
VCE = 10 V, IC = 5 mA
0.25
V
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
VCE(sat)
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Low level output voltage
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
R1
Resistance ratio
R1 / R2
Gain bandwidth product
fT
V
µA
80
IC = 10 mA, IB = 0.3 mA
High level output voltage
Input resistance
V
4.9
−30%
V
2.2
0.2
V
+30%
kΩ
0.047
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SJJ00174AED
1
XP0421M
IC  VCE
IB = 1.0 mA
0.9 mA
0.8 mA
120
150
100
100
0.3 mA
80
0.2 mA
60
40
0.1 mA
20
0
20
40
60
0
80 100 120 140 160
0
2
4
hFE  IC
−25°C
200
150
100
50
0
100
1 000
Collector current IC (mA)
5
10
15
20
25
Input voltage VIN (V)
0.01
0.1
1
1
10
100
Output current IO (mA)
SJJ00174AED
10
100
IO  VIN
30
35
40
Collector to base voltage VCB (V)
10
25°C
−25°C
VO = 5 V
Ta = 25°C
100
10
1
0
VO = 0.2 V
Ta = 25°C
1
Ta = 75°C
1 000
1
VIN  IO
100
0.1
0.1
0.1
Collector current IC (mA)
Output current IO (A)
25°C
250
10
12
f = 1 MHz
Ta = 25°C
Collector output capacitance Cob (pF)
Ta = 75°C
1
10
10
VCE = 10 V
300
8
IC / IB = 10
Cob  VCB
400
350
6
1
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
DC current gain hFE
0.7 mA
0.6 mA
0.5 mA
0.4 mA
50
0
2
VCE(sat)  IC
200
Collector current IC (mA)
Total power dissipation PT (mW)
140
Collector to emitter saturation voltage VCE(sat) (V)
PT  T a
250
0
0.5
1
1.5
2
Input voltage VIN (V)
2.5
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY