TENTATIVE TPCA8007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVII) TPCA8007-H Switching Regulator Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 19 S (typ.) Low leakage current: IDSS = 100 µA (max) (V DS = 100 V) • Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA) 0.95±0.05 • • 0.15±0.05 4 1 : R DS (ON) = 30 mO (typ.) (VG =10V, ID=10A) 0.05 M A 5 5.0±0.2 0.05 S S 1 4.25±0.2 Symbol Rating Unit Drain-source voltage V DSS 100 V Drain-gate voltage (RGS = 20 kΩ) V DGR 100 V Gate-source voltage V GSS ±20 V JEDEC ? ID 20 A JEITA ? IDP 40 PD 45 W PD 2.8 W PD 1.6 W EA S 351 mJ IAR 20 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A 3.5±0.2 Characteristics 4 0.6±0.1 Maximum Ratings (Ta = 25°C) 0.595 0.166±0.05 High speed switching Low drain-source ON resistance 0.4±0.1 1.1±0.2 Small footprint due to small and thin package • • 6.0±0.3 • 1.27 8 5.0±0.2 0.5±0.1 Unit: mm 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN TOSHIBA 4：GATE 2-5Q1A Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2004-03-08 TENTATIVE TPCA8007-H Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V， Tch = 25°C (initial)， L = 1.0 mH， RG = 25 Ω， IAR = 20 A Note 4: Repetitive rating: pulse width limited by max channel temperature 2 2004-03-08 TENTATIVE TPCA8007-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±20 V, V DS = 0 V ±100 nA Drain cut-OFF current IDSS V DS = 100 V, V GS = 0 V 100 µA V (BR) DSS ID = 10 mA, V GS = 0 V 100 V Drain-source breakdown voltage V th V DS = 10 V, ID = 1 mA 3.0 5.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 10 A 30 47 mΩ Forward transfer admittance |Yf s | V DS = 10 V , ID = 10 A 9.5 19 S Input capacitance Ciss 1000 Reverse transfer capacitance Crss 21 Output capacitance Coss 500 (2) (13) 3 13 15 7.2 Rise time V DS = 10 V , V GS = 0 V , f = 1 MHz tr Turn-ON time ton Fall time tf Turn-OFF time toff 4.7 Ω Switching time Total gate charge (gate-source plus gate-drain) ID = 10 A V OUT 10 V V GS 0V RL = 5Ω Gate threshold voltage V DD ∼ − 50 V Duty < = 1%, tw = 10 µs Qg V DD ∼ − 80 V, V GS = 10 V , ID = 20 A pF ns Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd 5.0 Gate switch charge QSW 8.5 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (tw=1ms ) Symbol Test Condition Min Typ. Max Unit IDRP 40 A −1.7 V V DSF IDR = 20 A, V GS = 0 V 3 2004-03-08 TENTATIVE TPCA8007-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of 160 of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure such TOSHIBA products could cause loss of human life, bodily injury or damage to property. Case temperature Tc (°C) In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted o f r usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 4 2004-03-08