TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCT4204 TENTATIVE Lithium Ion Secondary Battery Applications Unit: mm • Lead(Pb)-Free • Small footprint due to small and thin package • Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.) • High forward transfer admittance: |Yfs| = (25) S (typ.) • Low leakage current: ISSS = 10 µA (max) (VSS = 30 V) • Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200μA) • Common drain 3.8±0.1 1 4 0.45 2.0±0.1 0.45 3 2 B 0.025 M B 0.6±0.05 0.14±0.04 Maximum Ratings (Ta = 25°C) 2 0.05 S S 3 0.4±0.1 Characteristics Symbol Rating Unit Source-source voltage VSSS 30 V Gate-source voltage VGSS ±12 V (Note 1) IS 6 Pulse (Note 1) ISP 24 Power dissipation (t = 10s ) (Note 2a,3) PD 1.7 W Power dissipation (t= 10s ) PD 0.51 W EAS TBD mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 2a, 5) EAR 0.17 mJ (Note 2b,3) Single pulse avalanche energy (Note 4) 4 1 A Channel temperature Tch 150 °C Storage temperature range Tstg −55to150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. WARNING 【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack 】 Flame-retardant resins of UL94-V0 flammability class are used in packages,however,they are not noncombustible. Use a unit,for example PTC Thermistor,which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit,a large short-circuit current will flow continuously,which may cause the device to catch fire or smoke. 1 0.5+0.04 -0.16 0.85±0.1 2.53±0.1 0.2± 0.05 DC Source current 0.4+0.2 -0.1 1.GATE1 2.GATE2 3. SOURCE2 4. SOURCE1 JEDEC ― JEITA ― TOSHIBA 2-2S1A Weight: 0.012 g (typ.) Circuit Configuration FE T 1 1 4 2 3 FE T 2 2004-11-09 TPCT4204 TENTATIVE Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a,3) Thermal resistance, channel to ambient (t = 10 s) (Note 2b,3) Symbol Max Unit Rth (ch-a) 76 °C/W Rth (ch-a) 244 °C/W Marking (Note 6) Lot code (month) Lot No. (weekly code) Pin #1 Part No. (or abbreviation code) 204 Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (b) Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: The power dissipation and thermal resistance values are shown for both FETs. Note 4: VDD = 24 V,Tch = 25°C (initial),L = mH,RG = 25 Ω,IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature. Note 6: ○ on lower left of the marking indicates Pin 1. 2 2004-11-09 TPCT4204 TENTATIVE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VSS = 0 V (Note 8) ±10 µA Source cut-OFF current ISSS VSS = 30 V, VGS = 0 V (Note 8) 10 µA V (BR) SSS IS = 10 mA, VGS = 0 V (Note 8) 30 V (BR) SSX IS = 10 mA, VGS = −12 V (Note 8) 15 Vth VSS = 10 V, IS = 200 µA (Note 8) 0.5 1.2 VGS = 2.5 V, IS = 3 A (Note 7) (24) (33) (44) VGS = 4.0 V, IS = 3 A (Note 7) (18.5) (23) (29.5) VGS = 4.5 V, IS = 3 A (Note 7) (17.5) (22) (28) VSS = 10 V, IS = 3 A (Note 8) (12.5) (25) (1990) (150) (210) TBD TBD Gate threshold voltage Drain-source ON resistance RSS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VSS = 10 V, VGS = 0 V, f = 1 MHz (Note 8) tr VGS Turn-on time ton 0V Turn-off time Total gate charge 4.7 Ω Switching time Fall time IS = 3 A 5V tf VOUT RL =3.3Ω Drain-source breakdown voltage VSS ∼ − 15 V TBD Duty < = 1%, tw = 10 µs (Note 8) TBD Qg VSS ∼ − 24 V, VGS = 5 V, IS = 6 A TBD (Note 8) TBD (Note 9) −1.2 Qgs1 Diode (source-source) forward voltage VSSF ISR = 6 A, VGS = 0 V 3 V mΩ S pF ns toff Gate-source charge1 V nC V 2004-11-09 TPCT4204 TENTATIVE RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-11-09