TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • • High speed switching Small gate charge: Qg = 48 nc (typ.) • Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.) • • High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) • Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 30 V Drain-gate voltage (RGS = 20 kΩ) V DGR 30 V Gate-source voltage V GSS ±20 V ID 15 IDP 60 PD 1.9 W PD 1.0 W EA S 146 mJ IAR 15 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current (Note 1) Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A JEDEC ? JEITA ? TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-07-14 TPC8016-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8016 H Type ※ Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, R G = 25 Ω, IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-07-14 TPC8016-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, V DS = 0 V ±10 µA Drain cut-OFF current IDSS V DS = 30 V, V GS = 0 V 10 µA V (BR) DSS ID = 10 mA, V GS = 0 V 30 V (BR) DSX ID = 10 mA, V GS = −20 V 15 V DS = 10 V, ID = 1 mA 1.1 2.3 V GS = 4.5 V , ID = 7.5 A 5.5 7.5 V GS = 10 V , ID = 7.5 A 3.7 5.7 V DS = 10 V , ID = 7.5 A 12.5 25 2380 410 980 9.8 21 Drain-source breakdown voltage Gate threshold voltage V th Drain-source ON resistance RDS (ON) Forward transfer admittance |Yf s | Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton tf Turn-OFF time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd Gate switch charge QSW 4.7 Ω Switching time Fall time ID = 7.5 A V OUT 10 V V GS 0V RL = 2 Ω Rise time V DS = 10 V , V GS = 0 V , f = 1 MHz V mΩ S pF ns 15 V DD ∼ − 15 V < Duty = 1%, tw = 10 µs 60 V DD ∼ − 24 V, V GS = 10 V , ID = 15 A 46 V DD ∼ − 24 V, V GS = 5 V , ID = 15 A 26 7.2 12.2 15.6 V DD ∼ − 24 V, V GS = 10 V , ID = 15 A V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 60 A −1.2 V V DSF IDR = 15 A, V GS = 0 V 3 2003-07-14 TPC8016-H ID – V DS 10 3.2 4.5 3.15 10 3.5 Drain current D I ID Drain current 3.05 6 3.0 4 2.9 2 0 0 0.6 Drain-source voltage 0.8 12 3.1 8 3.0 2.9 VGS = 2.8 V VGS = 2.7 V 0.4 3.2 4 2.8 0.2 10 (A) 16 0 0 1.0 0.4 VDS (V) 0.8 ID – V GS VDS (V) (A) Drain-source voltage Drain current D I 30 20 25 10 100 VDS (V) Common source Ta = 25°C Pulse test 0.8 0.6 0.4 ID = 15 A 0.2 7.5 Ta = −55°C 1 2 3 3.8 4 Gate-source voltage 2.0 V DS – V GS 40 5 0 0 6 VGS (V) 2 4 6 Gate-source voltage |Yf s | – ID 8 10 12 VGS (V) RDS (ON) – ID 100 Drain-source ON resistance R DS (ON) (mΩ) 100 Yfs (S) 1.6 1 Common source VDS = 10 V Pulse test Forward transfer admittance 1.2 Drain-source voltage 50 0 0 Common source Ta = 25°C, pulse test 3.3 4.5 3.5 3.1 (A) 8 ID – V DS 20 Common source Ta = 25°C, pulse test Ta = −55°C 25 10 100 1 Common source Ta = 25°C Pulse test 10 VGS = 4.5 V 10 Common source VDS = 10 V Pulse test 0.1 0.1 1 Drain current D I 10 1 0.1 30 (A) 1 Drain current D I 4 10 100 (A) 2003-07-14 TPC8016-H RDS (ON) – Ta IDR – V DS 100 (A) 10 8 Drain reverse current DR I ID = 15, 7.5, 3.8 A 6 VGS = 4.5 V ID = 15, 7.5, 3.8 A 4 10 2 5 10 3 10 VGS = 0 V 1 1 Common source Ta = 25°C Pulse test Common source Pulse test 0 −80 −40 0 40 Ambient temperature 80 Ta 120 0.1 0 160 −0.2 (°C) −0.4 Drain-source voltage Capacitance – V DS Gate threshold voltage Vth (V) Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 Drain-source voltage 100 2 1.5 1 Common source 0.5 V DS = 10 V ID = 1 mA Pulse test 0 −80 −40 0 VDS (V) Ambient temperature PD – Ta 40 VDS (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) 1.6 (2) Device mounted on a glass-epoxy board (b) (Note 2b ) Drain-source voltage t = 10 s 1.2 80 120 Ta 160 (°C) Dynamic input/output characteristics 2 (1) 40 (2) 0.8 0.4 16 Common source Ta = 25°C ID = 15 A Pulse test 14 30 12 VDD = 24 V 6 10 VDD = 24 V 12 20 8 VGS VDS 6 12 10 4 6 VGS (V) (pF) 1000 C Capacitance VDS (V) 2.5 Ciss (W) −1 V th – Ta 10000 Drain power dissipation PD −0.8 −0.6 Gate-source voltage Drain-source ON resistance R DS (ON) (mΩ) 12 2 0 0 50 100 Ambient temperature 150 Ta 0 0 200 (°C) 10 20 30 40 Total gate charge Qg 5 50 0 60 (nC) 2003-07-14 TPC8016-H r th − tw Normalized transient thermal impedance r th (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) t = 10 s 100 (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (S) Safe operating area 100 ID max (plused) * 1 ms* 10 Drain current D I (A) 10 ms* 1 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 VDSS max 1 Drain-source voltage 10 100 VDS (V) 6 2003-07-14 TPC8016-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the mos t recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own ris k. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 2003-07-14