TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to small and thin package z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 12 S (typ.) z Low leakage current : IDSS = −10 µA (max) (VDS = −20 V) z Enhancement mode : Vth = −0.5~ −1.2 V (VDS = −10 V, ID = −1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±12 V ID −5 IDP −20 PD (1) 1.5 Drain curren DC (Note 1) Pulse Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) A 1.0 PD (1) 0.75 ― JEITA ― TOSHIBA W PD(2) JEDEC 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration W PD (2) 0.45 Single pulse avalanche energy (Note 4) EAS 32.5 mJ Avalanche current (Note 1) IAR −5 A Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) EAR 0.10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPC8305 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 125 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking (Note 6) TPC8305 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = −16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2006-11-16 TPC8305 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V — — ±10 µA Drain cut−off current IDSS VDS = −20 V, VGS = 0 V — — −10 µA ID = −10 mA, VGS = 0 V −20 — — ID = −10 mA, VGS = 12 V −8 — — Drain−source breakdown voltage Gate threshold voltage V (BR) DSS V Vth VDS = −10 V, ID = −200 µA −0.5 — −1.2 V RDS (ON) VGS = −2.0 V, ID = −2.5 A — 56 80 mΩ RDS (ON) VGS = −2.5 V, ID = −2.5 A — 38 50 mΩ RDS (ON) VGS = −4.5 V, ID = −2.5 A — 24 30 mΩ Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A S Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Drain−source ON resistance Rise time Turn−ON time 6 12 — — 2030 — — 400 — Coss — 580 — tr — 25 — ton — 35 — tf — 95 — toff — 200 — — 24 — — 17 — — 7 — VDS = −10 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time Turn−OFF time Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“miller”) charge Qgd VDD ≈ −16 V, VGS = −5 V, ID = −5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — −20 A — — 1.2 V VDSF IDR = −5 A, VGS = 0 V 3 2006-11-16 TPC8305 4 2006-11-16 TPC8305 5 2006-11-16 TPC8305 6 2006-11-16 TPC8305 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-16