Advance Product Information January 19, 2006 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. Evaluation Boards are available upon request. Lead-free and RoHS compliant Wideband Gain Block / LNA X-Ku Point to Point Radio IF & LO Buffer Applications Measured Performance Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V 21 18 15 12 9 6 3 0 -3 -6 -9 -12 -15 -18 -21 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 Gain Output Input 2 4 6 8 10 12 14 16 18 20 14 16 18 20 Return Loss (dB) The TGA2513-SM provides a nominal 16 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Typical noise figure is < 3 dB from 2-15 GHz. • • • Gain (dB) The TriQuint TGA2513-SM is a packaged LNA/Gain Block with > 30 dB AGC via the control gate. The LNA operates from 2-20 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process. Primary Applications Frequency (GHz) 5 4.5 4 Noise Figure (dB) Product Description Frequency Range: 2-20 GHz 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB 2.5 dB Midband Noise Figure Bias Conditions: Vd=5V, Idq=75 mA, Vg2=2V Package Dimensions: 4.0 x 4.0 x 0.9 mm 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 12 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 7V 2/ V+ Positive Supply Voltage Vg1 Gate 1 Supply Voltage Range -2V TO 0 V Vg2 Gate 2 Supply Voltage Range -0.5 V TO +3.5 V I + Positive Supply Current 151 mA | IG | Gate Supply Current 10 mA PIN Input Continuous Wave Power 21 dBm 2/ PD Power Dissipation See note 3 2/, 3/ TCH Operating Channel Temperature 117 °C 4/, 5/ TM Mounting Temperature (30 Seconds) 260 °C TSTG Storage Temperature 2/ -65 to 117 °C 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (117 °C – TBASE °C) / 32 (°C/W) 4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM TABLE II RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 5V, Id = 75 mA Vg2 = 2V Vg1 = ~ -60 mV SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 2-20 GHz 17 dB IRL Input Return Loss f = 2-20 GHz 12 dB ORL Output Return Loss f = 2-20 GHz 10 dB NF Noise Figure f = 2-20 GHz 3 dB P1dB Output Power @ 1dB Gain Compression f = 2-20 GHz 16 dBm TABLE III THERMAL INFORMATION Parameter θJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 5 V ID = 75 mA Pdiss = 0.375 W TCH (oC) TJC (qC/W) TM (HRS) 97 32 8.1 E+6 Note: Worst case condition with no RF applied, 100% of DC power is dissipated. Package temperature @ 85 °C 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Measured Performance 21 18 15 12 9 6 3 0 -3 -6 -9 -12 -15 -18 -21 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 Gain Output Input 0 2 4 6 8 10 12 14 16 18 20 22 Return Loss (dB) Gain (dB) Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V, Vg1 = ~-60mV, typical 24 Frequency (GHz) 5 4.5 Noise Figure (dB) 4 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Measured Performance Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V, Vg1 = ~-60mV, typical 20 18 P1dB(dBm) 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 14 16 18 20 Frequency(GHz) 30 Output TOI dBm) 28 26 24 22 20 18 16 2 4 6 8 10 12 Frequency(GHz) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Measured Performance * Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V, Vg1 = ~-60mV, typical 20 18 16 Gain (dB) 14 12 10 -40 deg C 8 -25 deg C 0 deg C 6 +25 deg C 4 +50 deg C 2 +75 deg C 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 0 0 -40 deg C 25 deg C 0 deg C -6 +25 deg C -9 +50 deg C -12 +75 deg C -40 deg C -2 Output Return Loss (dB) Input Return Loss (dB) -3 -15 -18 -21 -24 -25 deg C -4 0 deg C -6 +25 deg C -8 +50 deg C -10 +75 deg C -12 -14 -16 -18 -20 -27 -22 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) * Note: Measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been de-embedded. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 24 Advance Product Information January 19, 2006 TGA2513-SM Package Pinout Diagram TGA 2513 Date Code Lot Code ;PP *URXQG3DG Top View Bottom View Dot indicates Pin 1 Pin Description 1, 3, 4, 5, 7, 8, 10, 13 Ground 2 RF Input 6 Vg1 9 RF Output 11 Vd 12 Vg2 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Mechanical Drawing [PP *URXQG3DG %RWWRP9LHZ 7ROHUDQFH 8QLWVPP GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Recommended Board Layout Assembly * 5: 1 PF Vc (Vg2) = 2V Vd = 5V 100pF 5),1 5)287 100pF Vg (Vg1)= ~60mV to obtain 75mA drain current 1 PF 5 : Recommended Bias-up Procedure • • • • • • Ensure no RF power is applied to the device Pinch-off device by setting Vg (Vg1) to -1.5V Increase Vd to 5V while monitoring gate current Increase Vc (Vg2) to 2V Increase Vg (Vg1) until drain current reaches 75 mA Apply RF Power Recommended Bias-Down Procedure • • • • Turn off RF power Decrease Vg (Vg1) to -1.5V Decrease Vc (Vg2) to 0 V Decrease Vd to 0 V * The layout is a general purpose drawing that needs to be tuned for the specific application. PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 °C/sec 3 °C/sec Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C Time above Melting Point 60 – 150 sec 60 – 150 sec Max Peak Temperature 240 °C 260 °C Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec Ordering Information Part Package Style TGA2513-SM QFN 12L 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com