MITSUBISHI SOFT RECOVERY DIODE ARY FD1500CV-90DA MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500CV-90DA 6.35 × 10.8 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH TYPE NAME 26 ± 0.5 φ85 ± 0.2 φ85 ± 0.2 0.4MIN ¡VRRM Repetitive peak reverse voltage ................... 4500V ¡IT(AV) Average on-state current .................... 1200A 12 ± 2 φ120MAX φ3.5 ± 0.2 2.2 ± 0.2DEPTH APPLICATION High-power inverters Fly-hweel diode for GCT Thyristor Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) V(LTDS) Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj Tstg — — Parameter Conditions Voltage class Unit Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Long term DC stability voltage — — — — 4500 4500 3600 3000 V V V V Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Operation junction temperature Storage temperature Mounting force required Weight Conditions Applied for all condition angles f = 60Hz, sinewave θ = 180°, Tf =74°C One half cycle at 60Hz, Tj =125°C start IFM =1500A, VR = 2250V, Tj = 25/125°C CC =6µF, LC = 0.3µH (See Fig. 1, 2) (Recommended value 47kN) Typical value 1450g Ratings 1900 1200 26 2.8× 106 Unit A A kA A 2s 1000 A/µs –40 ~ 125 –40 ~ 150 39 ~ 55 — °C °C kN g ELECTRICAL CHARACTERISTICS Symbol VFM IRRM QRR Erec Rth(j-f) Parameter Test conditions Forward voltage Repetitive peak reverse current Reverse recovery charge Reverse recovery energy Thermal resistance IFM = 3400A, Tj = 125°C VRM = 4500V, Tj = 125°C IFM = 1500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C CC = 6µF, LC = 0.3µH (See Fig. 1, 2) Junction to Fin Min. — — — — — Limits Typ. — — — — — Max. 5 150 4000 7 0.0071 Unit V mA µC J/P K/W Jul. 2002 MITSUBISHI SOFT RECOVERY DIODE ARY FD1500CV-90DA MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE QRR=(trr×IRM)/2 IT trr ANL L(load) TUD 0 CDi di/dt(0 ~ 50%IRM) Lc VR 50%IT Cc GCT 50%IRM 90%IRM VR VRM Fig. 1 Reverse recovery test circuit Fig. 2 Reverse recovery waveform PERFORMANCE CURVES Erec VS IF (TYPICAL) 103 7 5 3 2 CONDITION 8 VR = 2250V, Tj =125°C di/dt = 1000A/µs Cc = 6µF, Lc = 0.3µH 7 6 5 4 3 102 7 5 3 2 101 9 Erec (J/P) IF (A) MAXIMUM ON STATE CHARACTERISTIC 104 7 TYPICAL : Tj=125°C 5 3 2 2 1 0 1 2 3 4 5 6 7 VFM (V) 0 0 500 1000 1500 2000 2500 IF (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.010 0.009 0.008 Zth (K/ W) 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0.000 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (S) Jul. 2002