MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS ARY FGC3500AX-120DS MIN I L E PR . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm +0.2 16-φ4.5 0 34 ±0 .4 M3✕0.5 2.5DEPTH 0 (4 + – 0.3 ) ● ITQRM Repetitive controllable on-state current .......... 3500A ● IT(AV) Average on-state current .................... 1200A ● VDRM Repetitive peak off-state voltage .................. 6000V ● Anode short type 22.5° ± 0.5° φ147 ± 0.4 φ85 ± 0.2 φ85 ± 0.2 φ120MAX (φ127) 0.4MIN (6.8) 26 ± 0.5 φ1 0.4MIN FGC3500AX-120DS φ3.5 ± 0.2 2.2 ± 0.2DEPTH APPLICATION Inverters, DC choppers, Induction heaters, DC to DC converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) VLTDS Voltage class 21 21 21 6000 6000 4800 3600 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Long term DC stability voltage+ Unit V V V V V V V + : VGK = –2V Symbol Parameter ITQRM Repetitive controllable on-state current IT(RMS) IT(AV) ITSM RMS on-state current Average on-state current Surge on-state current I2t Current-squared, time integration diT/dt Critical rate of rise of on-state current VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 6000V, VD = 3600V, LC = 0.3µH, VRG = 20V diGQ/dt = 6000A/µs, Tj = 25/125°C (see Fig. 1, 3) Applied for all conduction angles f = 60Hz, sinewave θ = 180°, Tf = 70°C One half cycle at 60Hz, Tj = 125°C VD = 3600V, IT = 3500A, IGM= 200A, Tj= 125°C (see Fig. 1, 2) diG/dt = 100A/µs (Recommended value 40kN) Typical value Ratings Unit 3500 A 1800 1200 25 2.6 × 106 A A kA A 2s 1000 A/µs 10 21 1000 3500 10 120 200 6300 –20 ~ +125 –20 ~ +150 V V A A kW kW W W °C °C 32 ~ 48 1500 kN g Sep. 2000 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS ARY MIN I L E PR FGC3500AX-120DS . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions VTM IRRM IDRM IGRM On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current dv/dt Critical rate of rise of off-state voltage tgt td Eon Turn-on time Delay time IT = 4000A, Tj = 125°C VRM = 21V, Tj = 125°C VDM = 6000V, VGK = –2V, Tj = 125°C VRG = 21V, Tj = 125°C VD = 3600V, VGK = –2V, Tj = 125°C (Expo. wave) (see Fig. 4) VD = 3600V, IT = 3500A, di/dt = 1000A/µs IGM = 200A, diG/dt = 100A/µs, Tj = 125°C (see Fig. 1, 2) Turn-on switching energy ts Storage time Eoff Turn-off switching energy IGT VGT Rth(j-f) Gate trigger current Gate trigger voltage Thermal resistance VDM = 6000V, VD = 3600V, IT = 3500A diGQ/dt = 6000A/µs, CC = 6µF, LC = 0.3µH (see Fig. 1, 3) VRG = 20V, Tj = 125°C DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — Limits Typ — — — — Max 4.0 100 150 100 3000 — — V/µs — — — — — 1.2 3.0 1.0 — µs µs J/P — — 3.0 µs — 19 — J/P — — — — — — 2.5 1.5 0.011 A V °C/W Unit V mA mA mA Fig. 1 Turn-on and Turn-off waveform IT VD VD td tgt diG/dt td ; 0VG ~ 0.9VD tgt ; 0VG ~ 0.1VD diG/dt ; 0.1IGM ~ 0.9IGM ts ; 0VG ~ 0.9IT diGQ/dt ; 0.1IGQ ~ 0.9IGQ ts IGM IG diGQ/dt VRG VRG IGQ Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit Fig. 4 dv/dt test waveform (With clamp circuit) L dV/dt 0.632VD/τ L(line) VD GCT 0.632VD FWDi L(load) VD Rc VD CDi GCT τ t Lc Cc Sep. 2000 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS ARY MIN I L E PR FGC3500AX-120DS . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES TURN ON SWITCHING ENERGY (TYPICAL) 7 5 3 2 103 7 5 3 2 Tj=25°C 102 7 5 3 2 10 TURN OFF SWITCHING ENERGY Eoff (J/P) Tj=125°C 0 1 2 3 4 5 6 7 Condition 1.8 VD=3600V, di/dt=1000A/µs 1.6 IGM=200A, diG/dt=100A/µs Tj=125°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 500 1000 1500 2000 2500 3000 3500 4000 TURN ON CURRENT (A) TURN OFF SWITCHING ENERGY (TYPICAL) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 25 0.014 Condition VDM=3600V+0.44∗IT 20 VD=3600V, CC=6µF LC=0.3µF, Tj=125°C diGQ/dt=6000A/µs 15 10 5 0 2.0 ON-STATE VOLTAGE (V) 0 500 1000 1500 2000 2500 3000 3500 4000 TURN OFF CURRENT (A) THERMAL IMPEDANCE Zth (°C/W) ON-STATE CURRENT (A) 104 TURN ON SWITCHING ENERGY Eon (J/P) MAXIMUM ON-STATE CHARACTERISTIC 0.012 0.01 0.008 0.006 0.004 0.002 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (S) Sep. 2000