FDZ391P P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET -20 V, -3 A, 85 mΩ Features tm General Description Max rDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "low pitch" Thin WLCSP packaging process, the FDZ391P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Max rDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A Max rDS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A Occupies only 1.5 mm2 of PCB area Ultra-thin package: less than 0.4 mm height when mounted to PCB Applications RoHS Compliant Battery management Load switch Battery protection Pin 1 S S S D G G S D D TOP BOTTOM MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -3 -15 Power Dissipation TA = 25 °C (Note 1a) 1.9 Power Dissipation TA = 25 °C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 133 °C/W Package Marking and Ordering Information Device Marking 6 Device FDZ391P ©2008 Fairchild Semiconductor Corporation FDZ391P Rev.B Package WL-CSP Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET September 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -20 V -12 mV/°C -1 µA ±100 nA -1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C -0.4 -0.6 2 mV/°C VGS = -4.5 V, ID = -1 A 74 85 VGS = -2.5 V, ID = -1 A 90 123 VGS = -1.5 V, ID = -1 A 140 200 100 123 rDS(on) Drain to Source On Resistance ID(on) On to State Drain Current VGS = -4.5 V, VDS = - 5 V gFS Forward Transconductance VDS = -5 V, ID = -1 A VGS = -4.5 V, ID = -1 A TJ = 125 °C mΩ -10 A 7 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10 V, VGS = 0 V, f = 1 MHz 800 1065 pF 155 205 pF 90 135 pF Ω f = 1 MHz 9 11 20 ns VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 10 20 ns 50 80 ns 30 48 ns 9 13 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VGS = -4.5 V VDD = -10 V ID = -1 A 1 nC 2 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.1 A -1.1 (Note 2) IF = -1 A, di/dt = 100 A/µs -0.7 A -1.2 V 21 ns 5 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 133 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDZ391P Rev.B 2 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 -ID, DRAIN CURRENT (A) 14 VGS = -2.0 V 12 VGS = -4.5 V 10 VGS = -3.5 V 8 VGS = -2.5 V 6 4 VGS = -1.5 V PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX 2 0 0 0.5 VGS = -2.5 V 1.4 1.0 VGS = -4.5 V 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT(A) 12 14 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 1.5 ID = -1 A VGS = -4.5 V 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V 1.2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX 12 VDD = -5 V 9 6 TJ = 125 oC TJ = 25 oC 3 TJ = -55 oC 0 0.5 ID = - 0.5 A PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX 200 160 120 TJ = 125 oC 80 TJ = 25 oC 40 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance vs Gate to Source Voltage 15 -ID, DRAIN CURRENT (A) PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX VGS = -2.0 V 1.6 Figure 1. On Region Characteristics 60 VGS = 0 V 10 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0001 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 0 2.5 Figure 5. Transfer Characteristics FDZ391P Rev.B VGS = -1.5 V 1.8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 2000 ID = -1 A 1000 4 3 CAPACITANCE (pF) VDD = -5 V VDD = -10 V 2 VDD = -15 V 1 2 4 6 8 10 Coss 100 f = 1 MHz VGS = 0 V 50 0.1 0 0 Ciss 12 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics -IS, SOURCE1 TO SOURCE2 CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.5 V 2 VGS = - 2.5 V 1 o RθJA = 65 C/W 0 25 50 75 100 125 20 Figure 8. Capacitance vs Drain to Source Voltage 4 3 Crss 150 o TA, CASE TEMPERATURE ( C) 30 10 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 0.1 10 s DC RθJA = 133 oC/W o TA = 25 C 0.01 0.1 1 60 10 -VS, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 50 10 VGS = -10 V SINGLE PULSE RθJA = 133 oC/W o TA = 25 C 1 0.5 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) 10 100 1000 Figure 11. Single Pulse Maximum Power Dissipation FDZ391P Rev.B 4 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 133 C/W 0.01 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) 100 1000 Figure 12. Transient Thermal Response Curve FDZ391P Rev.B 5 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Dimensional Outline and Pad Layout FDZ391P Rev.B 6 www.fairchildsemi.com Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 FDZ391P Rev.B 7 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.