MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4305 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) • High collector current: IC (DC) = −5 A (max) • High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A) • Diode included for absorbing fly-back voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −6 V DC IC −5 Pulse ICP −8 Continuous base current IB Collector power dissipation (1-device operation) JEDEC ― A JEITA ― −0.5 A TOSHIBA PC 2.2 W Collector power dissipation (4-device operation) PT 4.4 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Collector current Storage temperature range 2-32C1E Weight: 3.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration R1 R2 6 7 5 1 2 8 3 4 R1 ≈ 4.5 kΩ 12 9 10 11 R2 ≈ 300 Ω 1 2006-10-27 MP4305 Marking MP4305 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 28.4 °C/W TL 260 °C (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −10 μA Collector cut-off current ICEO VCE = −100 V, IB = 0 A ― ― −10 μA Emitter cut-off current IEBO VEB = −6 V, IC = 0 A −0.6 ― −2.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −100 ― ― V hFE (1) VCE = −5 V, IC = −3 A 2000 ― 15000 hFE (2) VCE = −5 V, IC = −5 A 1000 ― ― Collector-emitter VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 Base-emitter VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 VCE = −2 V, IC = −0.5 A ― 40 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 55 ― pF ― 0.3 ― ― 2.0 ― ― 0.4 ― Transition frequency Collector output capacitance Cob ton IB1 Turn-on time fT Switching time Storage time tstg Input 20 μs IB2 Output 10 Ω Saturation voltage IB2 DC current gain IB1 ― V μs VCC = −30 V Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% 2 2006-10-27 MP4305 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Maximum forward current IFM ― ― ― 3 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1.0 ― μs ― 8 ― μC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 3 A, VBE = 3 V, dIF/dt = −50 A/μs Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Maximum forward current Symbol Test Condition Min Typ. Max Unit IFM ― ― ― 3 A Reverse current IR VR = 110 V ― ― 0.4 μA Reverse voltage VR IR = 100 μA 100 ― ― V Forward voltage VF IF = 1 A ― ― 1.5 V 3 2006-10-27 MP4305 IC – VCE IC – VBE −8 −8 −10 −3 VCE = −5 V −1.0 (A) Ta = 25°C −0.7 Collector current IC (A) Collector current IC −6 Common emitter Common emitter −1.5 −0.5 −4 −0.3 −2 IB = −0.2 mA −6 −4 −2 Ta = 100°C −55 25 0 0 −2 −4 −6 Collector-emitter voltage −8 0 0 −10 −0.8 VCE (V) −1.6 −2.4 Base-emitter voltage hFE – IC −3.2 −4.0 VBE (V) VCE – IB 30000 Common emitter VCE (V) −2.8 10000 5000 3000 Ta = 100°C 25 Collector-emitter voltage DC current gain hFE VCE = −5 V −55 1000 500 200 −0.05 −0.1 −0.3 −1 Collector current IC −3 −10 −20 Common emitter Ta = 25°C −2.4 IC = −8 A −2.0 −7 −6 −1.6 −5 −4 −3 −2 −1 −0.5 −0.1 −1.2 −0.8 −0.4 −0.1 (A) −1 −10 −100 −1000 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC −10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −10 IC/IB = 500 −5 −3 Ta = −55°C −1 25 −0.5 100 −0.3 −0.1 −0.3 −1 Collector current IC −3 Common emitter −3 Ta = −55°C 25 −1 (A) 100 −0.5 −0.3 −0.1 −10 IC/IB = 500 −5 −0.3 −1 Collector current IC 4 −3 −10 (A) 2006-10-27 MP4305 rth – tw Transient thermal resistance rth (°C/W) 300 100 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) 30 (1) (3) (2) 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 1 0.3 0.001 0.01 0.1 1 10 Pulse width 100 1000 tw (s) Safe Operating Area PT – Ta −20 10 PT (W) −10 IC max (pulsed)* −5 1 ms* 100 μs* Total power dissipation 10 ms* −1 −0.5 −0.3 8 6 (4) 4 Circuit board (3) (2) 2 (1) 0 0 −0.1 40 80 120 160 200 Ambient temperature Ta (°C) −0.05 *: Single nonrepetitive pulse Ta = 25°C −0.03 Curves must be derated linearly with increase in temperature. −0.01 −1 −3 −10 VCEO max −30 −100 −300 Collector-emitter voltage VCE (V) ΔTj – PT 200 Junction temperature increase ΔTj (°C) Collector current IC (A) −3 Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 160 Circuit board (2) (1) (4) 80 Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 40 0 0 1 2 3 Total power dissipation 5 (3) 120 4 PT 5 (W) 2006-10-27 MP4305 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-10-27