Order this document by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. • • • • High Voltage Breakdown Rating Low Saturation Voltages Fast Switching Capability High ES/b Energy Handling Capability ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Collector–Emitter Voltage (1) Collector–Emitter Voltage (1) Collector–Base Voltage (1) Emitter–Base Voltage Collector Current — Continuous** — Peak Base Current — Continuous (1) — Peak Emitter Current — Continuous — Peak Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C* Operating and Storage Junction (1) Temperature Range Symbol Value Unit VCEO(sus) VCER(sus) 350 Vdc 375 Vdc VCB VEB 450 Vdc 6.0 Vdc IC ICM IB IBM IE IEM PD 15 30 Adc 10 20 Adc 25 50 Adc 175 100 1.0 Watts TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 1.0 _C/W TL 275 _C CASE 1–07 TO–204AA (TO–3) W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8” from Case for 5 Seconds (1) Indicates JEDEC Registered Data. ** JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A. POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 THERMAL DERATING 60 40 20 0 0 40 80 120 160 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating REV 1 3–104 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N6251 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) VCEO(sus) 350 — Vdc Collector–Emitter Sustaining Voltage (Table 1) (IC = 200 mA) VCER(sus) 375 — Vdc — — 5.0 10 Collector Cutoff Current (VCE = Rated VCER, VBE(off) = 1.5 Vdc) (VCE = Rated VCER, VBE(off) = 1.5 Vdc, TC = 125_C) ICEV mAdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 225 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) ICEO — 5.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — 1.0 mAdc IS/b 5.8 0.3 — — Vdc ES/b 2.5 — mJ hFE 6.0 50 — Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 1.67 Adc) VCE(sat) — 1.5 Vdc Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.25 Adc) (IC = 10 Adc, IB = 1.67 Adc) VBE(sat) — 2.5 Vdc fT 2.5 — MHz tr — 2.0 µs ts — 3.5 µs tf — 1.0 µs SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased t = 1.0s (non–repetitive) Second Breakdown Energy with base reverse biased (Table 1) (IC = 10 A, VBE(off) = 4.0 Vdc, L = 50 µH) (VCE = 30 V) (VCE = 100 V) ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Rise Time Storage Time Fall Time (VCC = 200 Vdc, IC = 10 A, Duty Cycle 2.0%, tp = 100 µs) (IB1 = IB2 = 1.67 Adc) * Indicates JEDEC Registered Data. (1) Measured on a curve tracer (60 Hz full–wave rectified sine wave). Motorola Bipolar Power Transistor Device Data 3–105 2N6251 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCER(sus) 39 CIRCUIT VALUES 2 TEST CIRCUITS 0.02 µF 2 Lcoil = 50 µH, VCC = 11.5 V Rcoil = 0.2 Ω VCC = 200 V RL = 20 Ω RESISTIVE TEST CIRCUIT IC Rcoil 1N4937 t1 t VCL t1 VCC RS + 200 V t1 Adjusted to Obtain IC IC(pk) Lcoil 20 DC CURRENT PROBE (ICpk) [ LcoilVCC 1 tf TUT 3 0.1 VCE 2 25 t NOTE: SET IC(pk) TO OBTAIN IC = 200 mA AT VCEO(sus) EQUAL TO RATED VALUE. NOTE: ADJUST VClamp VOLTAGE FOR VCEO(sus) RATED VALUE. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2 IC = 10 A PW ≈ 100 µs tr ≤ 5 ns tf ≤ 50 ns DUTY CYCLE ≤ 2% OUTPUT WAVEFORMS TUT 2 4V 0 Lcoil = 14 mH Rcoil = 0.05 Ω VCC = 0 to 50 V fo = 60 Hz INDUCTIVE TEST CIRCUIT 1 51 +10 V 0 Lcoil = 42 mH Rcoil = 0.7 Ω, fo = 60 Hz VCC = 0 to 50 V 4.7 51 50 51 2 TIP41B 1 IB1 = 2.0 A +6.0 V 0 + 15 V 50 µF 50 1 +6.0 V 1 RESISTIVE SWITCHING 39 1 INPUT CONDITIONS ES/b 1.0 0.7 0.5 0.3 – 6.0 V D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 ZθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 2. Thermal Response IC, COLLECTOR CURRENT (AMP) 30 20 500 µs 100 µs 1.0 10 ms ms 10 5.0 3.0 2.0 dc 1.0 0.5 0.3 0.2 50 ms 50 70 100 5.0 7.0 10 20 30 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Active–Region Safe Operating Area 3–106 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25 _C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 3 may be found at any case temperature by using the appropriate curve on Figure 1. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. w TC = 25°C UNLESS NOTED BONDING WIRE LIMIT THERMAL LIMIT, SINGLE PULSE SECOND BREAKDOWN LIMIT 0.1 0.05 0.03 TC = 25°C TC = 100°C 20 µs 500 Motorola Bipolar Power Transistor Device Data 2N6251 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) DC CHARACTERISTICS 100 hFE, DC CURRENT GAIN 70 TJ = 150°C 50 25°C 30 20 – 55°C 10 VCE = 3.0 V VCE = 10 V 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 2.0 TJ = 25°C 1.6 1.2 IC = 2.0 A V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 VBE(sat) @ IC/IB = 5.0 0.8 VBE(on) @ VCE = 3.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 5 0.2 0.3 0.5 1.0 2.0 3.0 15A 0.4 0 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 Figure 5. Collector Saturation Region 1.4 0.6 10 A 0.8 Figure 4. DC Current Gain 1.2 6.0 A 5.0 7.0 10 2.5 2.0 hFE @ VCE 3 1.0 + 3.0 V 25°C to 150°C 0.5 *θVC for VCE(sat) 0 – 55°C to 25°C – 0.5 – 1.0 25°C to 150°C θVB for VBE – 1.5 – 55°C to 25°C – 2.0 – 2.5 20 *APPLIES FOR IC/IB ≤ 1.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 6. “On” Voltagae Figure 7. Temperature Coefficients 20 RESISTIVE SWITCHING PERFORMANCE 3.0 k 2.0 k tr 1.0 k 700 500 300 200 td @ VBE(off) = 5.0 V 100 70 50 30 0.02 ts 3.0 k t, TIME (ns) t, TIME (ns) 10 k 7.0 k 5.0 k VCC = 200 V IC/IB = 5.0 TJ = 25°C 2.0 k 1.0 k 700 500 VCC = 200 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C tr 300 200 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-on Time Figure 9. Turn-off Time Motorola Bipolar Power Transistor Device Data 5.0 10 20 3–107 2N6251 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z 3–108 Motorola Bipolar Power Transistor Device Data 2N6251 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Motorola Bipolar Power Transistor ◊ Device Data *2N6251/D* 3–109 2N6251/D