TLP130 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP130 Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for surface mount assembly. TLP130 consists of a photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and operate directly by AC input current. • Collector−emitter voltage: 80V(min.) • Current transfer ratio: 50%(min.) Rank GB: 100%(min.) • Isolation voltage: 3750Vrms(min.) • UL recognized: UL1577, file no.E67349 • Current transfer ratio TOSHIBA Classi− fication Current Transfer Ratio IF = 5mA, VCE = 5V, Ta = 25°C Min. Max. Marking Of Classification Standard 50 600 Blank, Y, GR, GB Rank GB 100 600 GB,GR Weight: 0.09 g 1 (Note) Application type name for certification test, please use standard product type name, i.e. TLP130(GB): TLP130 11−4C2 6 5 3 4 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 5 : Collector 6 : Base 1 2007-10-01 TLP130 Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Forward current IF(RMS) 50 mA Forward current derating (Ta≥53°C) ΔIF / °C −0.7 mA / °C IFP 1 A Tj 125 °C Collector−emitter voltage VCEO 80 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse,100pps) ICP 100 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW ΔPT / °C −2.0 mW / °C BVS 3750 Vrms LED Characteristic Peak forward current (100μs pulse,100pps) Detector Junction temperature Power dissipation derating (Ta≥25°C) Junction temperature Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF(RMS) ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP130 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min. Typ. Max. Unit Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V Capacitance CT V = 0, f = 1MHz ― 60 ― pF V(BR)CEO IC = 0.5mA 80 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA VCE = 48V, Ta = 85°C ― 2 50 μA Collector−emitter breakdown voltage Emitter−collector breakdown voltage Detector Symbol Collector dark current ICEO Collector dark current ICER VCE = 48V, Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current ICBO VCB = 10V ― 0.1 ― nA DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 400 ― ― Capacitance collector to emitter CCE V = 0 , f = 1MHz ― 10 ― pF Min. Typ. Max. Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― IF = ±5mA, VCB = 5V ― 10 ― IC = 2.4mA, IF = ±8mA ― ― 0.4 IC = 0.2mA, IF = ±1mA ― 0.2 ― ― ― 0.4 ― 1 10 μA 0.33 ― 3 ― Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio IC / IF Saturated CTR IC / IF(sat) Base photo−current IPB Collector-emitter VCE(sat) saturation voltage (Note 2) IC(ratio) = Test Condition IF = ±5mA, VCE = 5V Rank GB IF = ±1mA, VCE = 0.4V Rank GB Rank GB Off−state collector current CTR symmetry Symbol IC(off) IC(ratio) IF = ±0.7mA, VCE = 48V IC(IF = −5mA) / IC(IF = 5mA) (Note 2) IC2 (IF = IF2, VCE = 5V) IC1(IF = IF1, VCE = 5 V) IF1 % % μA V IC1 VCE IC2 IF2 3 2007-10-01 TLP130 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition Min. Typ. Max. Unit ― 0.8 ― pF 10 ― Ω 3750 ― ― AC, 1second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 25 ― ― 40 ― ― 2 ― ― 20 ― ― 30 ― VS=0, f=1MHz 10 VS=500V 5×10 AC, 1minute Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time tS Turn-off time tOFF Turn−on time tON Storage time tS Turn-off time tOFF Test Condition VCC = 10V, IC = 2mA RL = 100Ω RL = 1.9 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = ±16mA RL = 1.9kΩ (Fig.1) RBE = 220kΩ VCC = 5 V, IF = ±16mA μs μs μs Fig. 1 Switching time test circuit IF VCC IF ts RL RBE VCE VCE tON 4 VCC 4.5V 0.5V tOFF 2007-10-01 TLP130 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 40 20 60 100 80 Ambient temperature Ta 160 120 80 40 0 −20 120 0 40 20 Ambient temperature (°C) IFP – DR Pulse width ≤ 100μs (mA) 500 IF 300 Forward current Pulse forward current IFP (mA) 1000 100 50 30 10 −3 3 10 −2 3 10 Duty cycle ratio −1 3 10 0 DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 ΔVF / ΔTa – IF 1.2 1.4 VF 1.6 1.8 2.6 3.0 (V) IFP – VFP −3.2 −2.8 (mA) −2.4 IFP 1000 −2.0 Pulse forward current Forward voltage temperature Coefficient ΔVF / ΔTa (mV / °C) (°C) Ta = 25°C Forward voltage −1.6 −1.2 −0.8 −0.4 0.1 Ta 120 50 Ta = 25°C 10 3 100 80 IF – VF 100 3000 60 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width ≤ 10μs 5 Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 Pulse forward voltage 5 2.2 VFP (V) 2007-10-01 TLP130 IC – VCE IC – VCE 30 Ta = 25°C Ta = 25°C IF = 50mA (mA) 50mA 40 IC 30mA 20mA 15mA 40mA 30mA 20 30 Collector current Collector current IC (mA) 50 10mA PC(MAX) 20 IF = 5mA 10 0 0 2 6 4 8 Collector–emitter voltage 20mA 10mA 5mA 10 2mA 0 0 10 0.2 IC / IF (%) Ta = 25°C Sample A Current transfer ratio IC (mA) Collector current 5 10 3 Sample B 1 VCE = 10V 0.5 VCE = 5V 0.3 VCE = 0.4V 0.1 0.3 0.5 1 3 5 10 Forward current 30 IF 50 VCE = 10V Ta = 25°C VCE = 0.4V 500 300 Sample A 100 Sample B 50 0.5 1 3 30 (μs) 10 IPB 30 Base photo current 100 5 3 VCC IF A 1 50kΩ 0.3 0.5 100kΩ 1 RBE (mA) IC Collector current Ta = 25°C 50 VCE = 5V 0.1 0.1 3 5 Forward current 10 30 50 100 IF (mA) IPB – IF 300 RBE = ∞ 500kΩ 5 Forward current (mA) IC – IF at RBE 0.3 VCE (V) VCE = 5V 30 0.3 100 100 0.5 1.0 IC / IF – IF 1000 50 30 0.8 Collector–emitter voltage VCE (V) IC – IF 100 0.6 0.4 10 30 50 10 IF (mA) VCB IF VCB = 0V VCB = 5V A 3 1 0.3 0.1 0.1 100 Ta = 25°C 0.3 0.5 1 3 Forward current 6 5 10 30 50 100 IF (mA) 2007-10-01 TLP130 ICEO – Ta VCE(sat) – Ta 101 Collector–emitter saturation Voltage VCE(sat) (V) 0.24 Collector dark current ICEO (μA) 100 VCE = 48V 24V 10V 10−1 5V 10−2 IF = 5mA Ic = 1mA 0.20 0.16 0.12 0.08 0.04 0 −40 −20 20 0 40 80 60 Ambient temperature Ta 100 (℃) 10−3 10−4 0 20 60 40 Ambient temperature 100 80 Ta 120 (°C) IC – Ta Switching Time – RL 100 VCE = 5V 50 Ta = 25°C 300 IF = 16mA IF = 25mA 30 VCC = 5V RBE = 220kΩ 10mA 5mA (μs) 10 5 Switching time Collector current IC (mA) 100 3 1mA 1 50 tOFF 30 ts 10 5 0.5 0.5mA 3 0.3 tON 0.1 -20 0 20 40 Ambient temperature 60 Ta 80 1 1 100 3 5 10 Load resistance (℃) 7 30 RL 50 100 (kΩ) 2007-10-01 TLP130 Switching Time – RBE 1000 Switching Time – RL 1000 Ta = 25°C IF = 16mA IF = 16mA 500 VCC = 5V VCC = 5V 500 Ta = 25°C RL = 1.9kΩ 100 100 Switching time Switching time tOFF 50 ts 30 tOFF (μs) 300 (μs) 300 30 10 10 5 5 3 ts 50 3 tON 1 100k 300k 1M Base-emitter resistance tON 3M 1 1 ∞ RBE (Ω) 3 5 10 Load resistance 8 30 RL 50 100 (kΩ) 2007-10-01 TLP130 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01