GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED® Gehäuse • Chipgröße 300 x 300 µm2 • GaAs-LED mit sehr hohem Wirkungsgrad • Gute Linearität (Ie = f [IF]) bei hohen Strömen • Gleichstrom- oder Impulsbetrieb möglich • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Anwendungen Applications • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser • Industrieelektronik • „Messen/Steuern/Regeln“ • Automobiltechnik • Sensorik • Alarm- und Sicherungssysteme • IR-Freiraumübertragung • Miniature photointerrupters • • • • • • Industrial electronics Drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code Gehäuse Package F 0094U on request Infrarot emittierender Chip, Oberseite Anodenanschluß, Oberfläche aufgerauht Infrared emitting die, top side anode connection, surface frosted F 0094V Q67220-C1268 Infrarot emittierender Chip, Oberseite Anodenanschluß Infrared emitting die, top side anode connection 2002-02-04 1 F 0094U, F 0094V Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header without resin, TA = 25 °C) Bezeichnung Parameter Wert1) Value1) Symbol Symbol min. typ. Einheit Unit max. Wellenlänge der Strahlung Wavelength at peak emission IF = 10 mA λpeak 950 nm Spektrale Bandbreite bei 50% von Imax, IF = 10 mA Spectral bandwidth at 50% of Imax ∆λ 55 nm Sperrspannung Reverse voltage IR = 10 µA, VR 30 V 0.5/0.4 µs 5 Schaltzeiten, Ie von 10% auf 90% und von 90% auf tr, tf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω Durchlaβspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs VF Gesamtstrahlungsfluβ4) Total radiant flux4) IF = 100 mA, tp = 20 ms F 0094U F 0094V Φe Temperaturkoeffizient2) von λ Temperature coefficient2) of λ IF = 100 mA; Temperaturkoeffizient2) von VF Temperature coefficient2) of VF IF = 100 mA; 2002-02-04 1.35 3.0 4.8 4.2 2 1.5 V 8 7 mW mW TCλ 0.3 nm/K TCV -1.5 mV/K F 0094U, F 0094V Mechanische Werte Mechanical values Bezeichnung Parameter Wert1) Value1) Symbol Symbol Einheit Unit min. typ. max. Chipkantenlänge (x-Richtung) Length of chip edge (x-direction) Lx 0.28 0.3 0.32 mm Chipkantenlänge (y-Richtung) Length of chip edge (y-direction) Ly 0.28 0.3 0.32 mm Durchmesser des Wafers Diameter of the wafer D Chiphöhe Die height H Bondpaddurchmesser Diameter of bondpad d Bezeichnung Parameter Wert Value Vorderseitenmetallisierung Metallization frontside Aluminium Aluminum Rückseitenmetallisierung Metallization backside Goldlegierung Gold alloy Trennverfahren Dicing Sägen Sawing Verbindung Chip - Träger Die bonding Kleben Epoxy bonding 2002-02-04 3 76.2 170 185 135 mm 200 µm µm F 0094U, F 0094V Grenzwerte3) (TA = 25 °C) Maximum Ratings3) (TA = 25°C) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Maximaler Betriebstemperaturbereich Maximum operating temperature range Top - 40...+100 °C Maximaler Lagertemperaturbereich Maximum storage temperatur range Tstg - 40...+100 °C Maximaler Durchlaßstrom Maximum forward current IF 100 mA Maximaler Stoßstrom maximum surge current tp = 10 µs, D = 0.005 IS 3 A Maximale Sperrschichttemperatur Maximum junction temperature Tj 125 °C 2002-02-04 4 F 0094U, F 0094V Ιe = f (IF ) Ιe 100 mA Relative Spectral Emission2) Irel = f (λ), Radiant Intensity2) TA = 25 °C Single pulse, tp = 20 µs, TA = 25 °C Ι e (100 mA) 10 1 % Ι rel OHR00864 Ιe OHR01938 100 80 60 10 0 40 20 0 880 920 960 nm λ 1000 10 -1 10 -2 1060 10 0 A ΙF 10 1 Permissible Pulse Handling Capability2) IF = f (tP) duty cycle D = parameter, TA = 25 °C Forward Current2) ,IF = f (VF), single pulse, tp = 20 µs, TA = 25 °C 10 4 OHR01554 10 1 ΙF 10 -1 OHR00865 Ι F mA 5 A D= ΙF T D = 0.005 10 0 τ T τ 0.01 0.02 10 3 10 -1 5 0.05 0.1 0.2 10 -2 0.5 10 -3 2002-02-04 0 1 2 3 4 5 6 V VF DC 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 τ 8 5 F 0094U, F 0094V p-contact 0.185 (0.0073) 0.3 (0.0118) 0.135 (0.0053) Maßzeichnung Chip Outlines n-contact GMOY6080 Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as follows: mm (inch). 2002-02-04 6 F 0094U, F 0094V Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information generally describes the type of component and shall not be considered as assured characteristics or detailed specification. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our sales organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized by us for such purpose! Critical components5), may only be used in life-support devices or systems6) with the express written approval of OSRAM OS. 1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value. For final electrical testing a spot check with sufficient statistical accuracy is carried out. Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement. 2) Based on data measured in OSRAM Opto Semiconductor’s TOPLED® package. They represent typical1) data. 3) Maximum ratings are strongly package dependent and may differ between different packages. The values given represent the chip in an OSRAM OS TOPLED® package and are only valid for this package. 4) Value is referenced to the vendor’s measurement system (correlation to customer product(s) is required). 5) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 6) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-02-04 7