SUPER HIGH-POWER GaAlAs IR EMITTERS GLASS .012 HIGH MAX FEATURES ANODE (CASE) .157 .169 .324 .246 .332 .254 • • • • • .357 .362 .100 .018 .200 .031 CATHODE .025 OD-50W .500 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. .040 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA MIN 60 IR = 10MA VR = 0V MAX 60 mW/sr nm 80 110 1.65 5 30 90 0.7 Fall Time 0.7 UNITS mW 880 IF = 50mA IF = 500mA TYP 75 1000 nm 2 Deg Volts Volts pF Msec Msec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 1000mW Continuous Forward Current 500mA Peak Forward Current (10Ms, 400Hz)2 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C to 100°C 100°C 145°C/W Typical 75°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com SUPER HIGH-POWER GaAlAs IR EMITTERS THERMAL DERATING CURVE 100 PEAK FORWARD CURRENT, Ip (amps) 1,000 POWER DISSIPATION (mW) 800 INFINITE HEAT SINK 700 600 500 NO HEAT SINK 400 300 200 100 0 100 25 50 75 AMBIENT TEMPERATURE (°C) DEGRADATION CURVE RELATIVE POWER OUTPUT (%) 80 IF = 250mA 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 60 103 STRESS TIME, (hrs) 104 t = 100Ms 1 t t T T 0.1 1 DUTY CYCLE, D (%) 10 100 RADIATION PATTERN 40 20 0 –100 –80 FORWARD I-V CHARACTERISTICS D= Ip 60 105 1.5 –60 –40 –20 0 20 40 BEAM ANGLE, Q(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.4 10 RELATIVE POWER OUTPUT FORWARD CURRENT, IF (amps) 12 102 t = 50Ms 80 IF = 450mA 101 t = 10Ms 10 100 IF = 150mA MAXIMUM PEAK PULSE CURRENT 0.1 0.01 100 90 50 8 6 4 2 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 100 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 1,000 80 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 100 60 40 20 0 750 0.5 –50 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 RELATIVE POWER OUTPUT (%) 1,100 OD-50W 800 850 900 WAVELENGTH, L(nm) 950 1,000 10 1 10 DC PULSE 10Ms, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com