END OF LIFE DECEMBER 2013

SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES
ANODE
(CASE)
EPOXY
•
•
•
•
•
.357
.362
.039
.048
.100
.018
.297
.302
.200
.014
.018
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two cathode
pins must be externally connected together.
20
.031
Ultra high power output
Four wire bonds on die corners
Very uniform optical beam
Standard 3-lead TO-39 hermetic package
Chip size .030 x .030 inches
13
.130
MAX
OD-100
CATHODE
.040
45*
.500
PARAMETERS
TEST CONDITIONS
IF = 500mA
IF = 10A
Total Power Output, Po
Radiant Intensity, Ie
MIN
80
CE
IF = 500mA
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
IF = 50mA
DE
Half Intensity Beam Angle, θ
Forward Voltage, VF
IF = 500mA
IR = 10μA
VR = 0V
Reverse Breakdown Voltage, VR
MAX
UNITS
mW
60
mW/sr
880
nm
80
nm
110
Deg
30
LI
F
Rise Time
TYP
100
1300
1.65
5
E
Capacitance, C
Fall Time
MB
E
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
R
RoHS
2
Volts
Volts
90
pF
0.7
μsec
0.7
μsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
1000 mW
Continuous Forward Current
OF
500mA
Peak Forward Current (10μs, 400Hz)2
10A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
EN
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
145°C/W Typical
Thermal Resistance, RTHJA2
75°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
SUPER HIGH-POWER GaAlAs IR EMITTERS
100
INFINITE
HEAT SINK
700
600
500
NO
HEAT SINK
400
300
100
100
50
75
AMBIENT TEMPERATURE (°C)
t
D=
T
0.1
1
DUTY CYCLE, D (%)
80
IF = 250mA
70
IF = 450mA
103
STRESS TIME, (hrs)
104
40
20
FE
8
RELATIVE POWER OUTPUT
FORWARD I-V CHARACTERISTICS
10
LI
6
4
2
100
60
0
–100 –80
105
DE
102
80
CE
TCASE = 25°C
NO PRE BURN-IN PERFORMED
101
10
RADIATION PATTERN
100
60
t
T
Ip
DEGRADATION CURVE
IF = 150mA
12
t = 100μs
1
0.1
0.01
100
90
50
FORWARD CURRENT, IF (amps)
25
t = 50μs
R
0
t = 10μs
10
MB
E
POWER DISSIPATION (mW)
800
200
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
900
13
PEAK FORWARD CURRENT, Ip (amps)
1,000
MAXIMUM PEAK PULSE CURRENT
20
THERMAL DERATING CURVE
RELATIVE POWER OUTPUT (%)
1,100
OD-100
–60
–40
–20
0
20
40
BEAM ANGLE, θ(deg)
60
80
100
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
OF
0.6
0.5
–50
0
0
2
4
6
FORWARD VOLTAGE, VF (volts)
8
10
SPECTRAL OUTPUT
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
1,000
EN
D
100
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
–25
60
40
100
10
20
0
750
800
850
900
WAVELENGTH, λ(nm)
950
1,000
1
10
DC
PULSE
10μs, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013