2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) 2SK2989 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement−mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 50 V Drain−gate voltage (RGS = 20 kΩ) VDGR 50 V Gate−source voltage VGSS ±20 V (Note 1) ID 5 Pulse (Note 1) IDP 15 Drain power dissipation PD 0.9 W Channel temperature Tch 150 °C TOSHIBA Storage temperature range Tstg −55~150 °C Weight: 0.36 g (typ.) Drain current DC A JEDEC TO-92MOD JEITA — 2-5J1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Max Unit Rth (ch−a) 138 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-17 2SK2989 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 50 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Vth VDS = 10 V, ID = 1 mA 1.0 — 2.2 V VGS = 4 V, ID = 1.3 A — 240 330 VGS = 10 V, ID = 2.5 A — 120 150 VDS = 10 V, ID = 2.5 A 1.3 2.6 — — 145 — — 25 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 75 — tr — 16 — ton — 23 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz mΩ S pF ns Switching time Fall time tf — 27 — Turn−off time toff — 110 — Total gate charge (gate−source plus gate−drain) Qg — 6.5 — — 5 — — 1.5 — Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd VDD ≈ 40 V, VGS = 10 V, ID = 5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 15 A Forward voltage (diode) VDSF — — −1.5 V IDR = 5 A, VGS = 0 V Marking K2989 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SK2989 ID – VDS ID – VDS 5 10 10 5 5 6 4 8 4 8 Common source Ta = 25°C Pulse Test (A) 6 3.5 2 ID Common source Ta = 25°C Pulse Test 8 3 6 Drain current Drain current ID (A) 10 4 3 1 4 3.5 2 3 VGS = 2.5V VGS = 2.5 V 0 0 0 0.4 0.8 1.2 Drain-source voltage 1.6 VDS 2.0 0 2 (V) ID – VGS 8 VDS (V) Common source Ta = 25℃ Pulse Test 100 (V) 8 10 VDS – VGS 2.0 Ta = −55°C 1.6 VDS 25 6 Drain-source voltage ID (A) 6 Drain-source voltage 10 Drain current 4 4 2 0 Common source VDS = 10 V Pulse Test 0 2 4 8 6 Gate-source voltage VGS 12 0.8 2.5 0.4 1.3 0 10 ID = 5 A 0 (V) 4 8 12 Gate-source voltage 16 VGS 20 (V) RDS (ON) – ID |Yfs| – ID 1.0 10 Drain-source ON resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Ta = −55°C 100 25 1 Common source VDS = 10 V Pulse Test 0.1 0. 1 1 VGS = 4 V 10 0.1 Common source Ta = 25°C Pulse Test 0.01 0.1 10 Drain current ID (A) 1 10 Drain current ID (A) 3 2006-11-17 2SK2989 RDS (ON) − Ta IDR − VDS 100 Common source Pulse Test Drain reverse current IDR (A) 0.6 0.4 1.3 ID = 2.5A VGS = 4 V 5 0.2 0 40 3 1 1 VGS = 10 V −40 5 10 2.5 1.3 0 −80 10 80 120 0.1 160 VGS = 0 V −0.4 0 Ambient temperature Ta (°C) −0.8 Ciss Coss Crss 10 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 Drain-source voltage ID = 1mA Pulse Test 2 1 0 −80 100 −40 0 80 0.8 0.4 80 120 160 120 Ambient temperature Ta (°C) Ta = 25°C Pulse Test 60 15 VDD = 40V 10V 40 10 20V VDS 20 0 160 20 Common source ID = 5 A (V) VDS Drain-source voltage Drain power dissipation PD (W) 1.2 40 80 Dynamic input / output characteristics 1.6 0 40 Ambient temperature Ta (°C) VDS (V) PD − Ta 0 −1.6 (V) Common source VDS = 10 V 3 Gate threshold voltage Vth (V) 100 Capacitance C (pF) 4 1 VDS Vth − Ta Capacitance – VDS 1000 1 0.1 −1.2 Drain-source voltage 5 VGS 0 2 4 6 8 10 VGS (V) Drain-source ON resistance RDS (ON) (Ω) 0.8 Common source Ta = 25°C Pulse Test Gate-source voltage 1.0 0 Total gate charge Qg (nC) 4 2006-11-17 2SK2989 SAFE OPERATING AREA 100 ID max (pulse)* 10 (A) Drain current ID 100 μs * IDmax (continuous) 1 ms * DC OPEATION 1 Ta =25°C ※ Single pulse 0.1 Ta=25℃ Curves must be derated linearly with increase 0.01 0.01 VDSS max in temperature. 0.1 1 Drain-source voltage 10 VDS 100 (V) 5 2006-11-17 2SK2989 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17