MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors NPN Silicon 3 3 1 1 2 BASE SOT-523(SC-75) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value 40 75 6.0 600 Symbol VCEO VCBO VEBO IC Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Symbol Max PD 150 Thermal Resistance, Junction to Ambient RθJA 833 C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Unit mW DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) V(BR)EBO 6.0 - Vdc Collector Cutoff Current (VCB= 70 Vdc, IE=0) ICBO - 0.1 nAdc Emitter Cutoff Current (VEB= 3 Vdc, IC=0) IEBO - 0.1 nAdc OFF CHARACTERISTICS 1.FR-5=1.0 x 0.75 x 0.062 in 2. Pulse Test:Pulse Width=300 us, Duty Cycle <_2.0% WEITRON http://www.weitron.com.tw MMBT2222AT ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min hFE 35 - - (I C = 1.0 mAdc, VCE= 10 Vdc) 50 - - (IC = 10 mAdc, V CE = 10 Vdc) 75 - - (IC = 150 mAdc, V CE= 10 Vdc) 100 - - (IC = 500 mAdc, VCE= 10 Vdc) 40 - - - - 0.3 1 Vdc - 1.2 2 Vdc - MHz 8 pF Typ Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = 0.1 mAdc, VCE= 10 Vdc) Collector-Emitter Saturation Voltage (3) (IC = 150 mAdc, I B = 15mAdc) (IC = 500 mAdc, IB = 50mAdc) VCE(sat) Base-Emitter Saturation Voltage (3) (IC = 150 mAdc, I B= 15mAdc) (I C= 500 mAdc, I B= 50mAdc) VBE(sat) - - - - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1) (IC = 20 mAdc, VCE=20 Vdc, f=100 MHz) Output Capacitance (VCB= 10 Vdc, I E =0, f=1.0 MHz) fT 300 Cob - - - ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time WEITRON http://www.weitron.com.tw (VCC = 30 Vdc, I C= 150 mAdc, IB1= 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1=IB2= 15 mAdc) td - 10 tr - 25 ns ts - 225 tf - 60 MMBT2222AT 1000 250 DC CURRENT GAIN : h FE Pd ,POWER DISSIPATION(mW) (see Note 1) 200 150 100 50 Ta =125 C 100 Ta =25 C Ta =-25 C 10 VCE =1.0V 0 0 100 1 0.1 200 Ta ,AMBIENT TEMPERATURE( C) 20 Cibo CAPACITANCE( p F) 10 5.0 Cobo 10 50 VCE ,COLLECTOR-EMITTER VOLTAGE (VOLTS) 30 1.0 1.8 1.6 1.4 0.4 Ta =25 C 0.3 Ta =150 C 0.2 0.1 Ta =-50 C 10 100 IC ,COLLECTOR CURRENT(mA) 1000 FIG.5 Collector Emitter Saturation Voltage vs. Collector Current VBE(ON) ,BASE EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE(VOLTS) VCE(sat),COLLECTOR TO EMITTER IC /IB =10 http://www.weitron.com.tw 1C =30mA 1C =1mA 1C =10mA 1C =100mA 1C =300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 FIG.4 Typical Collector Saturation Region 0.5 WEITRON 1000 IB ,BASE CURRENT(mA) FIG.3 Typical Capacitance 1 100 2.0 REVERSE VOLTS(V) 0 10 FIG.2 Typical DC Current Gain vs Collector Current FIG.1 Power Derating Curve 1.0 0.1 1 IC ,COLLECTOR CURRENT(mA) 1.0 0.9 VCE =5V Ta =50 C 0.8 0.7 Ta =50 C 0.6 0.5 Ta =150 C 0.4 0.3 0.2 0.1 1 10 IC ,COLLECTOR CURRENT(mA) FIG.6 Base Emitter Voltage vs. Collector Current 100 MMBT2222AT 1000 f T ,GAIN BAND WIDTH PRODUCT(MHz) VCE =5V 100 10 1 1 10 Ia ,COLLECTOR CURRENT(mA) FIG.7 Gain Bandwidth Product vs. Collector Current WEITRON http://www.weitron.com.tw 100 MMBT2222AT SOT-523 Outline Dimensions (SC-75) Unit:mm SC-75 A B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25