2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO -40 40 Vdc Emitter-Base Voltage VEBO -5.0 5.0 Vdc Collector Current(DC) IC(DC) -3.0 3.0 Adc Collector Current(Pulse)(1) IC(Pulse) -7.0 7.0 Adc Base Current IB(Pulse) -0.6 0.6 Adc Total Cevice Disspation Ta=25°C PD 1.0 W Total Cevice Disspation Tc=25°C PD 10 W Junction Temperature Tj 150 °C Tstg -55 to +150 °C Storage, Temperture Device Marking 2SB772=B772 , 2SD882=D882 ELECTORICAL CHARACTERISTICS Symbol Min Max Unit Collect-Emitter Breakdown Voltage (IC=-10/10 mAdc, IB=0) V(BR)CEO -30/30 - Vdc Collect-Base Breakdown Voltage (IC=-100/100 µAdc, IE=0) V(BR)CBO -40/40 - Vdc Emitter-Base Breakdown Voltage (IE=-100/100 µAdc, IC=0) V(BR)EBO -5.0/5.0 - Vdc Collector Cutoff Current (VCE=-30/30 Vdc, IB=0) ICEO - -1.0/1.0 µAdc Collector Cutoff Current (VCB=-40/40 Vdc, IE=0) ICBO - -1.0/1.0 µAdc Emitter Cutoff Current (VEB=-6.0/6.0Vdc, IC=0) IEBO - -1.0/1.0 µAdc Characteristics NOTE: 1.PW ≤ 350us, duty cycle ≤ 2% WEITRON http://www.weitron.com.tw 1/5 Rev.B 14-Aug-07 2SB772 2SD882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min TYP Max Unit DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) hFE (1) 60 - 400 - DC Current Gain (IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc) hFE (2) 32 - - - Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) VCE(sat) - - -0.5/0.5 Vdc Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) VBE(sat) - - -2.0/2.0 Vdc fT - 80/90 Characteristics ON CHARACTERISTICS Current-Gain-Bandwidth Product (IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz) MHz - Classification of hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 WEITRON http://www.weitron.com.tw 2SB772 2SD882 F1. Total Power Dissipation VS. Ambient Temperature 1. Aluminum heat sink of 1.0 mm thickness. 2. With no insulator film. 3. With silicon compound. 8 ite he at 0 50 100 150 Ta-Amient Temperature-°C 20 d Without heat sink 0 0 50 -Ic,Collector Current(A) 1 0.3 3 10 30 100 300 0.3 0.1 1 3 2SB772 IB=-5mA IB=-4mA IB=-3mA -0.4 30 2.0 IB=-6mA -0.8 10 IB=-2mA 0 -4 -8 -12 -16 -20 vCE -Collector-Emitter Voltage(V) WEITRON http://www.weitron.com.tw us 60 100 Pulse Test IB=10mA IB=9mA IB=8MA IB=7mA 1.6 1.2 IB=6mA IB=5mA 0.8 IB=4mA IB=3mA 0.4 IB=2mA IB=-1mA 0 00 F6. Collector Current VS. Collector To Emitter Voltage -Ic,Collector Current(A) -Ic,Collector Current(A) Pulse Test IB=-10mA IB=-9mA IB=-8MA IB=-7mA -1.2 6 W =1 2SD882 F5. Collector Current VS. Collector To Emitter Voltage -1.6 1m S mS VCE-Collector to Emitter Voltage-V PW-Pulse Width-ms -2.0 10 NOTE 1. Tc=25 C 2. Curves must be derated linearly with increase of temperature and Duty Cycle. 0.03 1000 PW< - 10 ms (Duty Cycle < -50 %) P Di s L sipa (S tio ing imite d n le no nr s/b ep L im eti tiv ite ep d u ls e) 1 0.01 1 Ic(max),DC 3 3 0.3 Ic(max),Pulse S 1m 0. 4Rth-Thermal Resistance- C/W 10 10 0.1 150 F4. Safe Operating Areas VCE=10V IC =1.0A Duty=0.001 30 100 Tc,Case Temperature(°C) F3. Thermal Resistance VS. Pulse Width ° ted ite 9 cm 2 2 40 im i lim 2 2 60 bl on cm 0c m nk 25 si 10 4 S/ 80 ti pa si is D fin 6 100 VCEO MAX 10 in PT-Total Power Dissipation-W NOTE dT-Percentage of Rated Current-% F.2 Derating Curve for All Types IB=1mA 0 0 4 8 12 16 20 vCE -Collector-Emitter Voltage(V) h FE, VBE -I c 1000 hFE , -DC Current Gain 600 VCE=2.0V Puse Test 2SB772 300 h FE 100 2SD882 60 30 10 6 2SB772 VBE 2SD882 3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 VBE(sat)-Base Saturation Voltage(V) F7. VCE(sat)-Collector Saturation Voltage(V) 2SB772 2SD882 F8. VCE(sat), VBE(sat),-Ic 10 6 3 0.1 0.06 0.03 0.01 0.006 0.003 0.001 30 10 3 Cob-Output Capacitance(PF ) Cib-Input Capacitance(PF ) f T -Gain Bandwidth Product(MHZ) 2SB772 2SD882 1 0.01 300 0.1 0.3 Ic-Collector Current(A) WEITRON http://www.weitron.com.tw 2SD 0.003 8 82 0.01 0.03 0.1 0.3 1 3 10 1 f=1.0MHz I E =0(Cob) IC=0(Cib) 2SD8 82 2SB77 2 100 Cib 2SB77 2 60 30 2SD8 82 Cob 10 6 3 1 0.03 2SB772 t) sa E( F10. Cob -VCB , Cib -VCE VCE=5.0V Forecd air Cooling (with heat sink) 100 VC Ic-Collector Current(A) F9. fT - Ic 300 2SD882 0.3 Ic-Collector Current(A) 1000 2SB772 VBE(sat) 1 0.6 3 6 10 30 60 VCB -Collector to Base Voltage(V) VEB -Emitter to Base Voltage(V) 2SB772 2SD882 TO-126 Outline Dimensions G A B M H S φ L D C J E K unit:mm Dim A B C D E G H J K L M S φ WEITRON http://www.weitron.com.tw TO-126 MAX Min 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290TYP 4.480 4.680 15.300 15.700 2.100 2.300 3.900 4.100 3.200 3.000