JMNIC 2SA1758

JMnic
Product Specification
2SA1758
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・Wide area of safe operation
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-12
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1758
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA ,IC=0
-5
V
VCEsat-1
Collector-emitter saturation voltage
IC=-6A; IB=-0.3A
-0.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=-8A; IB=-0.4A
-0.5
V
VBEsat-1
Base-emitter saturation voltage
IC=-6A; IB=-0.3A
-1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=-8A; IB=-0.4A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-2A ; VCE=-2V
Transition frequency
IC=-1A ; VCE=-10V
fT
‹
CONDITIONS
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
90
MHz
JMnic
Product Specification
2SA1758
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3