JMNIC 2SC1051

Product Specification
www.jmnic.com
2SC1051
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Wide area of safe operation
APPLICATIONS
・For low frequency power amplifier and
large power switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
7
A
60
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Product Specification
www.jmnic.com
2SC1051
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.0
V
VBE
Base-emitter on voltage
IC=1A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=5V
VCEsat
fT
‹
CONDITIONS
hFE Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
MIN
TYP.
40
MAX
UNIT
320
8
MHz
Product Specification
www.jmnic.com
2SC1051
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3