STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES PRODUCT SUMMARY VDSS ID 40V 50A RDS(ON) Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 9 @ VGS = 10V TO-252 and TO-251 Package. D D G D G S STU SERIES TO-252AA(D-PAK) S G STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage 25 C Drain Current-Continuous @Ta b -Pulsed a Drain-Source Diode Forward Current Avalanche Energy ID 50 A IDM 100 20 A A A VDS a Avalanche Current Unit VGS Limit 40 20 IS I AS E AS c 23 130 mJ PD 50 W TJ, TSTG -55 to 175 C c Maximum Power Dissipation a Ta= 25 C Operating Junction and Storage Temperature Range V V THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC 3 C /W Thermal Resistance, Junction-to-Ambient R JA 50 C /W 1 STU/D432S ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter 5 Min Typ Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDSS V DS = 32V, V GS =0V 1 Gate-Body Leakage IGSS V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage VGS(th) V DS = V GS , ID = 250uA Drain-Source On-State Resistance RDS(ON) On-State Drain Current ID(ON) gFS OFF CHARACTERISTICS ON CHARACTERISTICS 40 V uA a Forward Transconductance DYNAMIC CHARACTERISTICS 1.6 3 V V GS = 10V , ID =10A 7 9 m ohm V GS = 4.5V, ID =5A 9 11 m ohm VDS = 10V, VGS = 10V 1.25 30 A 28 S 1130 PF 240 PF 145 PF 18 ns 22 ns 61 ns 9.6 ns VDS =15V, ID =10A,VGS =10V 23.5 nC VDS =15V, ID =10A,VGS =4.5V 11.5 nC 2.7 nC nC VDS = 10V, ID = 10A b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 15V ID = 10 A VGS = 10V RGEN = 3.3 ohm VDS =15V, ID = 10A VGS =10V 2 3.2 S T U/D432S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.91 V GS = 0V, Is = 20A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. c. Start ing TJ=25 c , L = 0.5 mH , RG = 25 W , I AS = 23 A, VDD < -V(BR)DSS ( See Figure13 ) 100 60 V G S =10V V G S =4V 48 V G S =3.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 80 60 40 V G S =3V 20 0 V G S =2.5V 0 36 -55 C 24 T j=125 C 25 C 12 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 2.0 R DS (ON) , On-R es is tance Normalized 20 16 R DS (on) (m W) 1.4 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 12 8 V G S =10V 4 1 0.7 1 20 40 60 80 1.8 1.4 V G S =4.5V I D =5A 1.2 1.0 0 100 V G S =10V I D =10A 1.6 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 30 I D =10A Is , S ource-drain current (A) 25 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D432S 20 125 C 15 10 25 C 75 C 5 0 0 2 4 6 8 125 C 10 1 10 V G S , G ate- S ource Voltage (V ) 25 C 20 0 0.24 0.48 0.72 0.96 1.20 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STU/D432S 10 VGS, Gate to Source Voltage (V) 1800 1500 900 600 Coss 300 Crss 0 0 6 4 2 0 5 10 15 20 25 30 0 4 8 VDS, Drain-to Source Voltage (V) 12 16 20 24 28 32 Qg, Total Gate Charge (nC) Figure 10. Gate Charge Figure 9. Capacitance 600 10 V DS =15V ,ID=10A 1 V G S =10V 1 6 10 it Lim 10 Rg, Gate Resistance (W) 10 0m s ms s 1s DC 1 0.5 0.1 60 100 300 600 1m 10 N) TD(on) 100 (O Tf S Tr TD(off ) ID, Drain Current (A) 100 60 RD 350 Switching Time (ns) 6 C, Capacitance (pF) Ciss 1200 VDS=15V ID=10A 8 VGS=10V Single Pulse Tc=25 C 1 10 30 VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics 5 60 STU/D432S V ( BR )D S S 15V D R IVE R L VDS tp D .U .T RG + - VD D IA S 20V A IAS 0.0 1 tp Unclamped Inductive Waveforms Unclamped Inductive Test Circuit F igure 13b. F igure 13a. 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = PDM* RθJA (t) 4. Duty Cycle, D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 t2 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 14. Normalized Thermal Transient Impedance Curve 6 1 10 S T U/D432S 7 S T U/D432S E A b3 C2 L3 E1 D H b2 L4 e b L2 A1 L L1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 8 7 0.019 32 4 6 0.020 36 4 0.023 0.035 43 4 REF. 4 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 0.197 BSC 402 0.005 0.037 0.065 REF. REF. S T U/D432S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N W ψ97 ± 1.0 17.0 + 1.5 - 0 T H K S 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 9 G R V