VISHAY 1N4448W-V

1N4448W-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case
styles including the DO-35 case with the
type designation 1N4448, the MiniMELF
case with the type designation LL4448,
and the SOT-23 case with the type designation
IMBD4448
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17431
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4448W-V
Ordering code
Type Marking
Remarks
1N4448W-V-GS18 or 1N4448W-V-GS08
A3
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
75
V
VRM
100
V
f ≥ 50 Hz
IF(AV)
1501)
mA
t < 1 s and Tj = 25 °C
IFSM
500
mA
Ptot
5001)
mW
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
Power dissipation
1)
Valid provided that electrodes are kept at ambient temperature.
Document Number 85722
Rev. 1.4, 17-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
1N4448W-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3501)
K/W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
- 65 to + 150
°C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
Symbol
Min.
IF = 5 mA
VF
0.62
IF = 100 mA
Typ.
Max.
V
VF
1
V
VR = 20 V
IR
25
nA
VR = 75 V
IR
5
µA
VR = 20 V, TJ = 150 °C
IR
50
µA
4
pF
4
ns
VF = VR = 0 V
Capacitance
Unit
0.72
Reverse recovery time
IF = 10 mA to IR = 10 mA,
VR = 6 V, RL = 100 Ω
trr
Rectification efficiency
f = 100 MHz, VRF = 2 V
ην
0.45
Rectification Efficieny Measurement Circuit
60 Ω
2 nF
VRF = 2 V
5 kΩ
VO
17436
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85722
[email protected], [email protected], [email protected]
Rev. 1.4, 17-Aug-10
1N4448W-V
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C unless otherwise specified
103
Tj = 25 °C
1.1
1.0
CD (VR)
1
CD (0 V)
Tj = 25 °C
10
IF (mA)
f = 1 MHz
Tj = 100 °C
102
0.9
0.8
10- 1
0.7
10- 2
0
1
2
Figure 1. Forward characteristics
104
0
17440
VF (V)
18105
8
10
5
2
103
103
5
5
2
2
IR (nA)
Rf (Ω)
6
VR (V)
104
f = 1 kHz
2
4
Figure 4. Relative Capacitance vs. Reverse Voltage
Tj = 25 °C
5
2
102
5
102
5
2
2
10
10
5
5
VR = 20 V
2
2
1
10-2
10-1
1
10
0
102
17441
17438
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
100
200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
mW
1000
900
800
Ptot
700
600
500
400
300
200
100
0
0
17439
100
200 °C
Tamb
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85722
Rev. 1.4, 17-Aug-10
For technical questions within your region, please contact one of the following:
Diode[email protected], [email protected], [email protected]
www.vishay.com
3
1N4448W-V
Vishay Semiconductors
18106
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
Package Dimensions in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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4
For technical questions within your region, please contact one of the following: Document Number 85722
[email protected], [email protected], [email protected]
Rev. 1.4, 17-Aug-10
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000