Three Phase Rectifier Bridges PSD 112 IdAVM VRRM = 127 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 112/08 PSD 112/12 PSD 112/14 PSD 112/16 PSD 112/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 90°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 127 1200 1300 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1100 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7200 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5000 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 5 5 270 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered, E148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 5.0 mA mA VF VTO rT RthJC IF = 300 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.7 0.8 4 V V mΩ per diode; DC current per module 0.9 0.15 K/W K/W RthJK per diode; DC current per module 1.08 0.18 K/W K/W dS Creeping distance on surface 10.0 mm dA a Creeping distance in air Max. allowable acceleration 9.4 50 mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 112 300 10 IF(OV) -----IFSM IFSM (A) TVJ=45°C TVJ=150°C [A] 250 1.6 200 900 4 2 As 780 1.4 1.2 150 TVJ=45°C 1 100 0 VRRM TVJ = 150°C TVJ=150°C 0.8 1/2 VRRM 50 TVJ = 25°C IF 0.6 1 VRRM 10 0 0.5 1.0 1.5 VF [V] 0.4 2.0 10 Fig. 1 Forward current versus voltage drop per diode 400 [W] 0 10 1 t[ms] 10 2 10 3 1 85 TC 90 0.15 0.09 350 = RTHCA [K/W] 0.22 95 100 300 4 t [ms] 110 0.34 10 130 DC sin.180° rec.120° rec.60° rec.30° [A] 110 105 250 6 Fig. 3 ∫i2dt versus time (1-10ms) per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration PSD 112 2 3 90 115 200 120 0.59 150 DC sin.180° rec.120° rec.60° rec.30° 100 50 PVTOT 0 IFAVM 50 125 130 50 135 1.34 140 145 I dAV 150 0 °C 0 100 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 T C (°C) Fig.5 Maximum forward current at case temperature K/W ZthJK 1.2 1 0.8 Z thJC 0.6 0.4 0.2 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions