STT2602 6.3A, 20V,RDS(ON) 34mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2602 is universally used for all commercial-industrial applications. Features * Low On-Resistance * Capable of 2.5V Gate Drive D 6 D D S 5 4 REF. A A1 A2 c D E E1 2602 Date Code G S 1 2 3 D D G Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current 1,2 Total Power Dissipation V V 6.3 A o ID@TC=70C 5 A IDM 30 A 2 W 0.016 W/ C o PD@TC=25 C Linear Derating Factor Operating Junction and Storage Temperature Range 20 ± 12 ID@TC=25 C 3 Unit o VGS 3 Ratings Tj, Tstg o o C -55~+150 Thermal Data Symbol Parameter Thermal Resistance Junction-case 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Max. Rthj-c Ratings 62.5 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 STT2602 6.3A, 20V,RDS(ON) 34mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Symbol Min. Typ. BVDSS 20 _ _ V BVDS/ Tj _ 0.1 _ V/ C VGS(th) 0.5 _ _ V IGSS _ _ ±100 nA VGS=±12V _ _ 1 uA VDS=20V,VGS=0 _ _ 10 uA VDS=16V,VGS=0 _ _ _ _ o Drain-Source Leakage Current (Tj=25 C ) o Drain-Source Leakage Current(Tj=55 C) Static Drain-Source On-Resistance 2 IDSS RD S (O N ) 90 VGS=1.8V, ID=1.0A 8.7 16 Gate-Drain ("Miller") Charge Qgd 1.5 _ Td(ON) _ Tr _ Td(Off) _ Tf _ _ _ 3.6 _ 6 _ 14 _ 18.4 _ 2.8 _ 603 RG=2Ω _ S VDS=5V, I D=5.3A Max. Unit 111 Gfs _ 13 Symbol Min. Typ. Forward Transconductance nS pF _ Reverse Transfer Capacitance ID=1A VGS=10V VGS=0V VDS=15V _ Crss ID=5.3A VDS=10V VGS= 4.5V VDD=15V 1085 144 Coss _ nC RD=15Ω _ Output Capacitance VGS=4.5V, ID=5.3A _ _ Ciss mΩ _ Qgs Input Capacitance VDS=VGS, ID=250uA VGS=2.5V, ID=2.6A Gate-Source Charge Fall Time o Reference to 25 C, ID=1mA VGS=10V, ID=5.5A 30 34 VGS=0V, ID=250uA 50 _ Turn-off Delay Time o Test Condition _ Qg Rise Time Unit _ Total Gate Charge2 Turn-on Delay Time2 Max. f=1.0MHz Source-Drain Diode Parameter VSD _ _ Reverse Recovery Time Trr _ 16.8 Reverse Recovery Change Q rr Forward On Voltage 2 2 _ 11 1.2 _ _ Test Condition V IS=1.2A, VGS=0V. nS IS=5A, VGS=0V. nC dl/dt=100A/us Notes: 1.Pulse width limited by safe operating area. 2.Pulse width≦300us, dutycycle≦2%. O 3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4