New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View S N-Channel MOSFET Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C 32 ID 12b, c 10b, c IDM Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 50e IS 6.9b, c IAS 33 EAS 55 mJ 83 58 PD W 8.3b, c 5.8b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 40 TC = 25 °C Maximum Power Dissipation V 35 TA = 70 °C Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol b, d Typical Maximum t ≤ 10 s RthJA 15 18 Steady State RthJC 1.5 1.8 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 50 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 69796 S-80184-Rev. A, 04-Feb-08 www.vishay.com 1 New Product SUD35N10-26P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 165 mV/°C - 11 2.5 4.4 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 40 µA A rDS(on) VGS = 10 V, ID = 12 A 0.021 gfs VDS = 15 V, ID = 12 A 25 0.026 Ω S Dynamicb Input Capacitance Ciss 2000 Output Capacitance Coss Reverse Transfer Capacitance Crss 60 Total Gate Charge Qg 31 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 12 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 12 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 47 nC 10 9 td(on) Turn-On Delay Time pF 180 Ω 1.5 10 15 10 15 15 25 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 50 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 40 IS = 10 A IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 75 ns 100 150 nC 38 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69796 S-80184-Rev. A, 04-Feb-08 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 TC = - 55 °C VGS = 10 thru 7 V 8 I D - Drain Current (A) I D - Drain Current (A) 30 VGS = 6 V 20 TC = 25 °C 6 4 TC = 125 °C 10 2 VGS = 4 V 0 0.0 VGS = 5 V 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.023 2500 Ciss 2000 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 2 0.022 VGS = 10 V 0.021 1500 1000 Coss 500 Crss 0.020 0 0 10 20 30 40 0 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 100 2.2 10 ID = 12 A 2.0 VDS = 50 V 8 ID = 12 A VGS = 10 V 1.8 VDS = 80 V 4 1.6 (Normalized) 6 r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 1.4 1.2 1.0 0.8 2 0.6 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69796 S-80184-Rev. A, 04-Feb-08 30 35 0.4 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 r DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 12 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 4 5 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage rDS(on) vs. VGS vs. Temperature 4.5 200 4.0 ID = 250 µA 150 Power (W) V GS(th) (V) 3.5 3.0 100 2.5 50 2.0 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.001 175 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by rDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 69796 S-80184-Rev. A, 04-Feb-08 New Product SUD35N10-26P Vishay Siliconix 40 80 30 60 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 0 40 20 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69796 S-80184-Rev. A, 04-Feb-08 www.vishay.com 5 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 40 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69796. www.vishay.com 6 Document Number: 69796 S-80184-Rev. A, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1