TC2997C PRE3_20050418 Preliminary 2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 20 W Typical Power at 2.1 GHz • 12 dB Typical Linear Power Gain at 2.1 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 50 mm • 100 % DC and RF Tested • Flange Ceramic Package DESCRIPTION The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS (@ 2.1 GHz ) Symbol P1dB CONDITIONS MIN TYP MAX UNIT Output Power at 1dB Gain Compression Point 42 43 11 12 dB 52 dBm dBm GL Linear Power Gain IP3 Intercept Point of the 3rd-order Intermodulation, *PSCL = 32 dBm PAE Power Added Efficiency at 1dB Compression Power 40 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 12.5 A gm Transconductance at VDS = 2 V, VGS = 0 V 9000 mS VP Pinch-off Voltage at VDS = 2 V, ID = 60 mA -1.7 Volts 22 Volts 0.9 °C/W BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2997C PRE3_20050418 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37 dBm 100 W 175 °C - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2997C PRE3_20050418 EVALUATION BOARD PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil Part Type Resistor Reference Designator R1 Description 12 ohm 0805 - Manufacturer Capacitor Ci1 1.2 pF 0603 Murata Capacitor Ci2 0.75 pF 0603 Murata Capacitor Ci3 2.0 pF 0603 Murata Capacitor Ci4 1000 pF 0603 Murata Capacitor Capacitor Ci5 Ci6 0.1 uF 0603 10 uF 1206 Murata Murata Capacitor Co1 2.2 pF 0805 ATC Capacitor Co2 1.5 pF 0805 ATC Capacitor Co3 1000 pF 0603 Murata TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3