SAVANTIC 2SD1406

SavantIC Semiconductor
Product Specification
2SD1406
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Collector power dissipation
:PC=25W@TC=25
·Low collector saturation voltage
·Complement to type 2SB1015
·
APPLICATIONS
·For audio frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector -emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
3
A
0.5
A
IC
Collector current
IB
Base current
PC
Collector power dissipation
Ta=25
2.0
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1406
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
0.25
1.0
V
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
0.7
1.0
V
ICBO
Collector cut-off current
VCB=60V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
µA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
60
hFE-2
DC current gain
IC=3A ; VCE=5V
20
Transition frequency
IC=0.5A; VCE=5V
3
MHz
Collector output capacitance
IE=0 ;f=1MHz ; VCB=10V
70
pF
0.8
µs
1.5
µs
0.8
µs
fT
COB
CONDITIONS
MIN
TYP.
MAX
60
UNIT
V
300
Switching times
ton
Trun-on time
ts
Storage time
tf
Fall time
RL=15A;VCC=30V
IB1=-IB2=0.2A
hFE-1 Classifications
O
Y
GR
60-120
100-200
150-300
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
2SD1406
SavantIC Semiconductor
Product Specification
2SD1406
Silicon NPN Power Transistors
4