SAVANTIC 2SD553

SavantIC Semiconductor
Product Specification
2SD553
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SB553
·Low collector saturation voltage
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
IB
Base current
1
A
PC
Collector power dissipation
TC=25
40
Ta=25
1.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
SavantIC Semiconductor
Product Specification
2SD553
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.4A
0.2
0.4
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.4A
0.9
1.2
V
ICBO
Collector cut-off current
VCB=70V; IE=0
30
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=4A ; VCE=1V
30
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
250
pF
fT
Transition frequency
IC=1A ; VCE=4V
10
MHz
0.2
µs
2.5
µs
0.5
µs
50
UNIT
V
240
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=- IB2=0.3A
RL=10?; VCC=30V
hFE-1Classifications
O
Y
70-140
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SD553
SavantIC Semiconductor
Product Specification
2SD553
Silicon NPN Power Transistors
4