MOSFET SMD Type MOS Field Effect Transistors 2SJ360 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 (VGS=-4V,ID=-1.0A) 1 High forward transfer admittance :|Yfs|=0.9S(Typ.) A +0.1 0.53-0.1 Max.)(VDS=-60V) +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 Low leakage current :IDSS=-100 3 2 +0.1 0.48-0.1 +0.1 0.80-0.1 RDS(on)=0.55 +0.1 2.50-0.1 Low on-state resistance +0.1 4.00-0.1 Features 1 Gate 1. Source Base 1. 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS -60 V Gate to source voltage VGSS 20 V Drain current (DC) ID -1 A Drain current(pulse) * ID -3 A Power dissipation PD 0.5 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 1%. www.kexin.com.cn 1 MOSFET SMD Type 2SJ360 Electrical Characteristics Ta = 25 Parameter Symbol Min Drain cut-off current IDSS VDS=-60V,VGS=0 Gate leakage current IGSS VGS= Gate threshold voltage Vth VDS=-10V,ID=-1mA -0.8 Forward transfer admittance Yfs VDS=-10V,ID=-0.5A 0.5 Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Typ 16V,VDS=0 Max Unit 100 A 10 -2.0 0.9 A V S VGS=-4V,ID=-0.5A 0.86 1.2 VGS=-10V,ID=-0.5A 0.55 0.73 155 pF 20 pF Crss 75 pF td(on) 20 ns tr 17 ns 100 ns td(off) VDS=-10V,VGS=0,f=1MHZ VGS(on)=-10V,VDD=-30V,ID=--0.5A RL=60 tf 20 ns Total Gate Charge Qg 6.5 nC Gate to Source Charge Qgs 4.5 nC Gate Drain Charge Qgd Contimuous drain reverse current IDR -1 A Pulse drain reverse current IDRP -3 A Diode forward voltage VDSF Reverse recovery time trr Reverse recovery charge Qrr Fall time Marking Marking 2 Testconditons www.kexin.com.cn Z8 VGS=-10V,ID=-1A,VDD=-48V 2.0 IDR=-1A,VGS=0V IDR=-1A,VGS=0V,di/dt=50A/ s nC 1.7 V 50 ns 50 c