KEXIN 2SK2109

IC
MOSFET
SMD Type
MOS Field Effect Transistor
2SK2109
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
Features
+0.1
-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.3A
+0.1
4.00-0.1
Low on-resistance
High switching speed
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
2.60
+0.1
-0.1
+0.1
0.80-0.1
1
+0.1
0.48-0.1
1 Gate
1. Source
Base
1.
0.40
+0.1
-0.1
+0.1
3.00-0.1
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
0.5
A
Idp
1.0
A
Drain current
Power dissipation
PD
20
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(th)
VDS=10V,ID=1mA
0.8
VDS=10V,ID=0.3A
0.4
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
VDS=60V,VGS=0
Max
1.0
10
1.5
2.0
VGS=4.0V,ID=0.3A
0.55
1.0
VGS=10V,ID=0.3A
0.41
0.8
Unit
A
nA
V
S
111
pF
55
pF
Crss
19
pF
td(on)
2.2
ns
tr
1.5
ns
35
ns
19
ns
td(off)
Fall time
Typ
tf
VDS=10V,VGS=0,f=1MHZ
ID=0.3A,VGS(on)=10V,RL=83 ,RG=10
,VDD=25V
Marking
Marking
NS
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