IC MOSFET SMD Type MOS Field Effect Transistor 2SK2111 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1 4.00-0.1 Low on-resistance 1 Gate 1. Source Base 1. 0.40 +0.1 -0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 20 ID 1.0 A Idp 2.0 A Drain current Power dissipation * PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 V W * 16 cm2X0.7mm,ceramic substrate used Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA 0.8 Yfs VDS=10V,ID=0.5A 0.4 Gate threshold voltage Forward transfer admittance Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Typ Max Unit 1.0 A 10 1.4 2.0 V S VGS=4.0V,ID=0.5A 0.32 0.6 VGS=10V,ID=0.5A 0.24 0.45 VDS=10V,VGS=0,f=1MHZ A 170 pF 87 pF Reverse transfer capacitance Crss 32 pF Turn-on delay time td(on) 2.8 ns 2.3 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=0.5A,VGS(on)=10V,RL=50 ,RG=10 ,VDD=25V 55 ns 27 ns Marking Marking NU www.kexin.com.cn 1