ISC 2SD884

Inchange Semiconductor
Product Specification
2SD884
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Large PC
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATNIGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
330
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
7
A
ICP
Collector current-Peak
10
A
ICP
Collector current-Peak
nonrepetitive
15
A
PT
Total power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD884
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=5A ;IB=0.5A
1.2
V
VCE=330V; VEB=0
0.1
ICES
CONDITIONS
TYP.
MAX
200
B
B
UNIT
V
Collector cut-off current
mA
VCE=300V; VEB=0,Ta=100℃
1.0
1.0
IEBO
Emitter cut-off current
VEB=6.0V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
Fall time
IC=5A ;-VEB=5V
IB1 =0.8A;RB=0.5Ω
tf
MIN
2
10
mA
45
0.75
μs
Inchange Semiconductor
Product Specification
2SD884
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3