SavantIC Semiconductor Product Specification 2SD884 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATNIGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 330 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current-Peak 10 A ICP Collector current-Peak nonrepetitive 15 A PT Total power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD884 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 V VBE(sat) Base-emitter saturation voltage IC=5A ;IB=0.5A 1.2 V VCE=330V; VEB=0 0.1 ICES CONDITIONS TYP. MAX 200 UNIT V Collector cut-off current mA VCE=300V; VEB=0,Ta=100 1.0 1.0 IEBO Emitter cut-off current VEB=6.0V; IC=0 hFE DC current gain IC=5A ; VCE=4V Fall time IC=5A ;-VEB=5V IB1 =0.8A;RB=0.5> tf MIN 2 10 mA 45 0.75 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 2SD884