ISC 2SC3688

Inchange Semiconductor
Product Specification
2SC3688
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage
・High speed
APPLICATIONS
・Ultrahigh-definition color display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
固电
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
INC
EM
S
E
G
N
A
H
PARAMETER
R
O
T
UC
D
N
O
IC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
1500
V
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
10
A
ICM
Collector current-peak
25
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VCEO
TC=25℃
Inchange Semiconductor
Product Specification
2SC3688
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0A
VCEsat
Collector-emitter saturation voltage
IC=8A ; IB=2.0A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ; IB=2.0A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE=0V
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0A
1.0
mA
hFE
DC current gain
IC=1A ; VCE=5V
tf
体
导
半
Storage time
固电
Fall time
EM
S
E
NG
A
H
C
IN
2
UNIT
V
8
R
O
T
UC
D
N
O
IC
IC=6.0A
IB1=1.2A;IB2=-2.4A
VCC=200V
MAX
800
Switching times
ts
TYP.
3.0
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC3688
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
R
O
T
UC
Inchange Semiconductor
Product Specification
2SC3688
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC