ISC 2SC2944

Inchange Semiconductor
Product Specification
2SC2944
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage,high speed switching
·High reliability
·Low saturation voltage
APPLICATIONS
·Color & B/W TV power supply
·Active power filter
·Industrial use power supply
·General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
15
A
IB
Base current (DC)
5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC2944
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=0.1mA ; IC=0
7
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.1mA ; IE=0
250
V
VCE(sat)
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
0.8
V
VBE(sat)
Base-emitter saturation voltage
IC=6A ;IB=1.2A
1.2
V
ICBO
Collector cut-off current
VCB=250V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=2A ; VCE=5V
20
TYP.
MAX
UNIT
80
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A; IB1=-IB2=2A
RL=5ΩPw=20μs,Duty≤2%
2
0.8
μs
1.5
μs
0.4
μs
Inchange Semiconductor
Product Specification
2SC2944
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3