SAVANTIC 2SC4276

SavantIC Semiconductor
Product Specification
2SC4276
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·Low collector saturation voltage
·High reliability
APPLICATIONS
·Switching regulators
·DC-DC convertor
·Solid state relay
·General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
15
A
IB
Base current
5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
MAX
UNIT
1.56
/W
SavantIC Semiconductor
Product Specification
2SC4276
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)CEO
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.2
V
ICBO
Collector cut-off current
VCB=450V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=10V; IC=0
100
µA
hFE
DC current gain
IC=2A ; VCE=5V
25
TYP.
MAX
UNIT
65
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7.5A;RL=20A
IB1=0.75A; IB2=-1.5A
Pw = 20µs; DutyB2%
2
1.0
µs
2.5
µs
0.5
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC4276
SavantIC Semiconductor
Product Specification
2SC4276
Silicon NPN Power Transistors
4